Reentrance of conductance in mesoscopic normal-metal/superconductor junctions

Nam Kim; H. Lee; H. S. Chang; J. J. Kim; J. O. Lee; J. W. Park; K. H. Yoo

doi:10.1016/S0921-4526(99)02900-2

Reentrance of conductance in mesoscopic normal-metal/superconductor junctions

Nam Kim, H. Lee, H. S. Chang, J. J. Kim, J. O. Lee, J. W. Park, K. H. Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Two different kinds of mesoscopic N-S-N junctions were fabricated by sandwiching Al or Pb film between two closely separated Au wires. dV/dI versus V curves for an Au-Pb-Au junction show a sharp zero-bias dip, while those for an Au-Al-Au show a reentrant zero-bias maximum. Interference between conjugate electrons and holes at an interface with different degree of transparency is responsible for the contrasting behavior.

Original language	English
Pages (from-to)	1866-1867
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	284-288
Issue number	PART II
DOIs	https://doi.org/10.1016/S0921-4526(99)02900-2
Publication status	Published - 2000

Bibliographical note

Funding Information:
This work was supported by BSRI, MARC, and POSTECH under Contract Nos. 1NH9825602, 1MC9801301, and 1UD9900801, respectively.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Reentrance of conductance in mesoscopic normal-metal/superconductor junctions",

abstract = "Two different kinds of mesoscopic N-S-N junctions were fabricated by sandwiching Al or Pb film between two closely separated Au wires. dV/dI versus V curves for an Au-Pb-Au junction show a sharp zero-bias dip, while those for an Au-Al-Au show a reentrant zero-bias maximum. Interference between conjugate electrons and holes at an interface with different degree of transparency is responsible for the contrasting behavior.",

author = "Nam Kim and H. Lee and Chang, {H. S.} and Kim, {J. J.} and Lee, {J. O.} and Park, {J. W.} and Yoo, {K. H.}",

note = "Funding Information: This work was supported by BSRI, MARC, and POSTECH under Contract Nos. 1NH9825602, 1MC9801301, and 1UD9900801, respectively. ",

year = "2000",

doi = "10.1016/S0921-4526(99)02900-2",

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T1 - Reentrance of conductance in mesoscopic normal-metal/superconductor junctions

AU - Kim, Nam

AU - Lee, H.

AU - Chang, H. S.

AU - Kim, J. J.

AU - Lee, J. O.

AU - Park, J. W.

AU - Yoo, K. H.

N1 - Funding Information: This work was supported by BSRI, MARC, and POSTECH under Contract Nos. 1NH9825602, 1MC9801301, and 1UD9900801, respectively.

PY - 2000

Y1 - 2000

N2 - Two different kinds of mesoscopic N-S-N junctions were fabricated by sandwiching Al or Pb film between two closely separated Au wires. dV/dI versus V curves for an Au-Pb-Au junction show a sharp zero-bias dip, while those for an Au-Al-Au show a reentrant zero-bias maximum. Interference between conjugate electrons and holes at an interface with different degree of transparency is responsible for the contrasting behavior.

AB - Two different kinds of mesoscopic N-S-N junctions were fabricated by sandwiching Al or Pb film between two closely separated Au wires. dV/dI versus V curves for an Au-Pb-Au junction show a sharp zero-bias dip, while those for an Au-Al-Au show a reentrant zero-bias maximum. Interference between conjugate electrons and holes at an interface with different degree of transparency is responsible for the contrasting behavior.

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JO - Physica B: Condensed Matter

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