Abstract
Two different kinds of mesoscopic N-S-N junctions were fabricated by sandwiching Al or Pb film between two closely separated Au wires. dV/dI versus V curves for an Au-Pb-Au junction show a sharp zero-bias dip, while those for an Au-Al-Au show a reentrant zero-bias maximum. Interference between conjugate electrons and holes at an interface with different degree of transparency is responsible for the contrasting behavior.
Original language | English |
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Pages (from-to) | 1866-1867 |
Number of pages | 2 |
Journal | Physica B: Condensed Matter |
Volume | 284-288 |
Issue number | PART II |
DOIs | |
Publication status | Published - 2000 |
Bibliographical note
Funding Information:This work was supported by BSRI, MARC, and POSTECH under Contract Nos. 1NH9825602, 1MC9801301, and 1UD9900801, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering