Reentrance of conductance in mesoscopic normal-metal/superconductor junctions

Nam Kim, H. Lee, H. S. Chang, J. J. Kim, J. O. Lee, J. W. Park, K. H. Yoo

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Two different kinds of mesoscopic N-S-N junctions were fabricated by sandwiching Al or Pb film between two closely separated Au wires. dV/dI versus V curves for an Au-Pb-Au junction show a sharp zero-bias dip, while those for an Au-Al-Au show a reentrant zero-bias maximum. Interference between conjugate electrons and holes at an interface with different degree of transparency is responsible for the contrasting behavior.

Original languageEnglish
Pages (from-to)1866-1867
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART II
DOIs
Publication statusPublished - 2000

Bibliographical note

Funding Information:
This work was supported by BSRI, MARC, and POSTECH under Contract Nos. 1NH9825602, 1MC9801301, and 1UD9900801, respectively.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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