Abstract
Two different kinds of mesoscopic N-S-N junctions were fabricated by sandwiching Al or Pb film between two closely separated Au wires. dV/dI versus V curves for an Au-Pb-Au junction show a sharp zero-bias dip, while those for an Au-Al-Au show a reentrant zero-bias maximum. Interference between conjugate electrons and holes at an interface with different degree of transparency is responsible for the contrasting behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 1866-1867 |
| Number of pages | 2 |
| Journal | Physica B: Condensed Matter |
| Volume | 284-288 |
| Issue number | PART II |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Kim, N., Lee, H., Chang, H. S., Kim, J. J., Lee, J. O., Park, J. W., & Yoo, K. H. (2000). Reentrance of conductance in mesoscopic normal-metal/superconductor junctions. Physica B: Condensed Matter, 284-288(PART II), 1866-1867. https://doi.org/10.1016/S0921-4526(99)02900-2