Reentrance of conductance in mesoscopic normal-metal/superconductor junctions

Nam Kim, H. Lee, H. S. Chang, J. J. Kim, J. O. Lee, J. W. Park, K. H. Yoo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Two different kinds of mesoscopic N-S-N junctions were fabricated by sandwiching Al or Pb film between two closely separated Au wires. dV/dI versus V curves for an Au-Pb-Au junction show a sharp zero-bias dip, while those for an Au-Al-Au show a reentrant zero-bias maximum. Interference between conjugate electrons and holes at an interface with different degree of transparency is responsible for the contrasting behavior.

Original languageEnglish
Pages (from-to)1866-1867
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART II
DOIs
Publication statusPublished - 2000 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Reentrance of conductance in mesoscopic normal-metal/superconductor junctions'. Together they form a unique fingerprint.

  • Cite this

    Kim, N., Lee, H., Chang, H. S., Kim, J. J., Lee, J. O., Park, J. W., & Yoo, K. H. (2000). Reentrance of conductance in mesoscopic normal-metal/superconductor junctions. Physica B: Condensed Matter, 284-288(PART II), 1866-1867. https://doi.org/10.1016/S0921-4526(99)02900-2