Reference-circuit analysis for high-bandwidth spin transfer torque random access memory

Byungkyu Song; Taehui Na; Seong Ook Jung; Jung Pill Kim; Seung H. Kang

doi:10.1109/ISLPED.2015.7273541

Reference-circuit analysis for high-bandwidth spin transfer torque random access memory

Byungkyu Song, Taehui Na, Seong Ook Jung, Jung Pill Kim, Seung H. Kang

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A global reference-circuit (RC), which means one RC is shared with many sensing circuits (SC), is being considered for high-bandwidth STT-RAMs because of the low power consumption and small area characteristic. However, using the global RC for high-bandwidth STT-RAMs causes a droop effect and coupling noise effect, leading to the significant performance degradation. Thus, the validity of using the global RC should be identified. In this paper, the local RC and various global RCs are introduced, and compared in aspects of area, sensing time, and power consumption. By classification of the merits and demerits of various RCs, we present the following requirements of proper RC for high-bandwidth STT-RAMs: 1) small area, 2) no performance degradation, 3) low power consumption, and 4) process variation tolerant reference signal generation.

Original language	English
Title of host publication	Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	365-370
Number of pages	6
ISBN (Electronic)	9781467380096
DOIs	https://doi.org/10.1109/ISLPED.2015.7273541
Publication status	Published - 2015 Sept 21
Event	20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015 - Rome, Italy Duration: 2015 Jul 22 → 2015 Jul 24

Publication series

Name	Proceedings of the International Symposium on Low Power Electronics and Design
Volume	2015-September
ISSN (Print)	1533-4678

Other

Other	20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015
Country/Territory	Italy
City	Rome
Period	15/7/22 → 15/7/24

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ISLPED.2015.7273541

Cite this

Song, B., Na, T., Jung, S. O., Kim, J. P., & Kang, S. H. (2015). Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. In Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015 (pp. 365-370). [7273541] (Proceedings of the International Symposium on Low Power Electronics and Design; Vol. 2015-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLPED.2015.7273541

Song, Byungkyu ; Na, Taehui ; Jung, Seong Ook et al. / Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 365-370 (Proceedings of the International Symposium on Low Power Electronics and Design).

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title = "Reference-circuit analysis for high-bandwidth spin transfer torque random access memory",

abstract = "A global reference-circuit (RC), which means one RC is shared with many sensing circuits (SC), is being considered for high-bandwidth STT-RAMs because of the low power consumption and small area characteristic. However, using the global RC for high-bandwidth STT-RAMs causes a droop effect and coupling noise effect, leading to the significant performance degradation. Thus, the validity of using the global RC should be identified. In this paper, the local RC and various global RCs are introduced, and compared in aspects of area, sensing time, and power consumption. By classification of the merits and demerits of various RCs, we present the following requirements of proper RC for high-bandwidth STT-RAMs: 1) small area, 2) no performance degradation, 3) low power consumption, and 4) process variation tolerant reference signal generation.",

author = "Byungkyu Song and Taehui Na and Jung, {Seong Ook} and Kim, {Jung Pill} and Kang, {Seung H.}",

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Song, B, Na, T, Jung, SO, Kim, JP & Kang, SH 2015, Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. in Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015., 7273541, Proceedings of the International Symposium on Low Power Electronics and Design, vol. 2015-September, Institute of Electrical and Electronics Engineers Inc., pp. 365-370, 20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015, Rome, Italy, 15/7/22. https://doi.org/10.1109/ISLPED.2015.7273541

Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. / Song, Byungkyu; Na, Taehui; Jung, Seong Ook et al.

Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 365-370 7273541 (Proceedings of the International Symposium on Low Power Electronics and Design; Vol. 2015-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Song B, Na T, Jung SO, Kim JP, Kang SH. Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. In Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 365-370. 7273541. (Proceedings of the International Symposium on Low Power Electronics and Design). doi: 10.1109/ISLPED.2015.7273541

Reference-circuit analysis for high-bandwidth spin transfer torque random access memory

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