Reference-circuit analysis for high-bandwidth spin transfer torque random access memory

Byungkyu Song, Taehui Na, Seong Ook Jung, Jung Pill Kim, Seung H. Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A global reference-circuit (RC), which means one RC is shared with many sensing circuits (SC), is being considered for high-bandwidth STT-RAMs because of the low power consumption and small area characteristic. However, using the global RC for high-bandwidth STT-RAMs causes a droop effect and coupling noise effect, leading to the significant performance degradation. Thus, the validity of using the global RC should be identified. In this paper, the local RC and various global RCs are introduced, and compared in aspects of area, sensing time, and power consumption. By classification of the merits and demerits of various RCs, we present the following requirements of proper RC for high-bandwidth STT-RAMs: 1) small area, 2) no performance degradation, 3) low power consumption, and 4) process variation tolerant reference signal generation.

Original languageEnglish
Title of host publicationProceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages365-370
Number of pages6
ISBN (Electronic)9781467380096
DOIs
Publication statusPublished - 2015 Sep 21
Event20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015 - Rome, Italy
Duration: 2015 Jul 222015 Jul 24

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
Volume2015-September
ISSN (Print)1533-4678

Other

Other20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015
CountryItaly
CityRome
Period15/7/2215/7/24

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Song, B., Na, T., Jung, S. O., Kim, J. P., & Kang, S. H. (2015). Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. In Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015 (pp. 365-370). [7273541] (Proceedings of the International Symposium on Low Power Electronics and Design; Vol. 2015-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLPED.2015.7273541