Reflection phase characteristics of active EBG structures using varactor diodes on a single layer

Jungmi Hong, Youngsub Kim, Young Joong Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A proposed active Electromagnetic Band-gap (EBG) can control the reflection phase using a varactor diode instead of by changing structure physically. This structure uses only one diode per four unit cells. It can operate as a group cell changing the reflection phase by simply varying varactor capacitances through an appropriate biasing voltage. The conventional loading of a single varactor for each of the unit cells of the EBG is overcome by connecting the unit cells to a feeding network directly without via. Moreover, this structure does not need via and uses single layer so it is simple to fabricate and can decrease cost. The proposed EBG structure can cover the reflection phase range of the group cell from -132°to 122°at 10 GHz.

Original languageEnglish
Title of host publication2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
Pages1148-1150
Number of pages3
DOIs
Publication statusPublished - 2013 Dec 1
Event2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul, Korea, Republic of
Duration: 2013 Nov 52013 Nov 8

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Other

Other2013 3rd Asia-Pacific Microwave Conference, APMC 2013
CountryKorea, Republic of
CitySeoul
Period13/11/513/11/8

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Hong, J., Kim, Y., & Yoon, Y. J. (2013). Reflection phase characteristics of active EBG structures using varactor diodes on a single layer. In 2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013 (pp. 1148-1150). [6695051] (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.1109/APMC.2013.6695051