Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition

B. J. Jin; H. S. Woo; S. Im; S. H. Bae; S. Y. Lee

doi:10.1016/S0169-4332(00)00751-0

Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition

B. J. Jin, H. S. Woo, S. Im, S. H. Bae, S. Y. Lee

Department of Physics

Research output: Contribution to journal › Article

99 Citations (Scopus)

Abstract

ZnO thin film has been deposited on a sapphire (0 0 1) at a temperature of 400 °C using a pulsed laser deposition (PLD) with oxygen pressures of 50, 200, 300, 400 and 500 mTorr. The photoluminescence (PL) intensity of ultra-violet (UV) luminescence increases as the oxygen pressure increases up to 300 mTorr. This is probably because the stoichiometry of oxygen-deficient ZnO film is improved by increasing oxygen pressure. Stoichiometry of ZnO films has been more improved by O₂ ambient annealing, but the textured micro-structure of the ZnO changes to the one with multi-orientation. The intensity of UV luminescence is generally proportional to the electrical resistivity and stoichiometry, but not much related to the micro-structures.

Original language	English
Pages (from-to)	521-524
Number of pages	4
Journal	Applied Surface Science
Volume	169-170
DOIs	https://doi.org/10.1016/S0169-4332(00)00751-0
Publication status	Published - 2001 Jan 15

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(00)00751-0

Fingerprint Dive into the research topics of 'Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition'. Together they form a unique fingerprint.

Cite this

Jin, B. J., Woo, H. S., Im, S., Bae, S. H., & Lee, S. Y. (2001). Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition. Applied Surface Science, 169-170, 521-524. https://doi.org/10.1016/S0169-4332(00)00751-0

@article{1d6ae57b8479450cb96fb5f61dfe7a7f,

title = "Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition",

abstract = "ZnO thin film has been deposited on a sapphire (0 0 1) at a temperature of 400 °C using a pulsed laser deposition (PLD) with oxygen pressures of 50, 200, 300, 400 and 500 mTorr. The photoluminescence (PL) intensity of ultra-violet (UV) luminescence increases as the oxygen pressure increases up to 300 mTorr. This is probably because the stoichiometry of oxygen-deficient ZnO film is improved by increasing oxygen pressure. Stoichiometry of ZnO films has been more improved by O2 ambient annealing, but the textured micro-structure of the ZnO changes to the one with multi-orientation. The intensity of UV luminescence is generally proportional to the electrical resistivity and stoichiometry, but not much related to the micro-structures.",

author = "Jin, {B. J.} and Woo, {H. S.} and S. Im and Bae, {S. H.} and Lee, {S. Y.}",

year = "2001",

month = jan,

day = "15",

doi = "10.1016/S0169-4332(00)00751-0",

language = "English",

volume = "169-170",

pages = "521--524",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition

AU - Jin, B. J.

AU - Woo, H. S.

AU - Im, S.

AU - Bae, S. H.

AU - Lee, S. Y.

PY - 2001/1/15

Y1 - 2001/1/15

N2 - ZnO thin film has been deposited on a sapphire (0 0 1) at a temperature of 400 °C using a pulsed laser deposition (PLD) with oxygen pressures of 50, 200, 300, 400 and 500 mTorr. The photoluminescence (PL) intensity of ultra-violet (UV) luminescence increases as the oxygen pressure increases up to 300 mTorr. This is probably because the stoichiometry of oxygen-deficient ZnO film is improved by increasing oxygen pressure. Stoichiometry of ZnO films has been more improved by O2 ambient annealing, but the textured micro-structure of the ZnO changes to the one with multi-orientation. The intensity of UV luminescence is generally proportional to the electrical resistivity and stoichiometry, but not much related to the micro-structures.

AB - ZnO thin film has been deposited on a sapphire (0 0 1) at a temperature of 400 °C using a pulsed laser deposition (PLD) with oxygen pressures of 50, 200, 300, 400 and 500 mTorr. The photoluminescence (PL) intensity of ultra-violet (UV) luminescence increases as the oxygen pressure increases up to 300 mTorr. This is probably because the stoichiometry of oxygen-deficient ZnO film is improved by increasing oxygen pressure. Stoichiometry of ZnO films has been more improved by O2 ambient annealing, but the textured micro-structure of the ZnO changes to the one with multi-orientation. The intensity of UV luminescence is generally proportional to the electrical resistivity and stoichiometry, but not much related to the micro-structures.

UR - http://www.scopus.com/inward/record.url?scp=17344380939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17344380939&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(00)00751-0

DO - 10.1016/S0169-4332(00)00751-0

M3 - Article

AN - SCOPUS:17344380939

VL - 169-170

SP - 521

EP - 524

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -