Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition

B. J. Jin, H. S. Woo, S. Im, S. H. Bae, S. Y. Lee

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

ZnO thin film has been deposited on a sapphire (0 0 1) at a temperature of 400 °C using a pulsed laser deposition (PLD) with oxygen pressures of 50, 200, 300, 400 and 500 mTorr. The photoluminescence (PL) intensity of ultra-violet (UV) luminescence increases as the oxygen pressure increases up to 300 mTorr. This is probably because the stoichiometry of oxygen-deficient ZnO film is improved by increasing oxygen pressure. Stoichiometry of ZnO films has been more improved by O2 ambient annealing, but the textured micro-structure of the ZnO changes to the one with multi-orientation. The intensity of UV luminescence is generally proportional to the electrical resistivity and stoichiometry, but not much related to the micro-structures.

Original languageEnglish
Pages (from-to)521-524
Number of pages4
JournalApplied Surface Science
Volume169-170
DOIs
Publication statusPublished - 2001 Jan 15

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this