Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition

B. J. Jin, H. S. Woo, S. Im, S. H. Bae, S. Y. Lee

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ZnO thin film has been deposited on a sapphire (0 0 1) at a temperature of 400 °C using a pulsed laser deposition (PLD) with oxygen pressures of 50, 200, 300, 400 and 500 mTorr. The photoluminescence (PL) intensity of ultra-violet (UV) luminescence increases as the oxygen pressure increases up to 300 mTorr. This is probably because the stoichiometry of oxygen-deficient ZnO film is improved by increasing oxygen pressure. Stoichiometry of ZnO films has been more improved by O2 ambient annealing, but the textured micro-structure of the ZnO changes to the one with multi-orientation. The intensity of UV luminescence is generally proportional to the electrical resistivity and stoichiometry, but not much related to the micro-structures.

Original languageEnglish
Pages (from-to)521-524
Number of pages4
JournalApplied Surface Science
Publication statusPublished - 2001 Jan 15


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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