Relationship between resistive switching and Mott transition in atomic layer deposition prepared La2Ti2O7-x thin film

Yue Wang; Minjae Kim; Akendra Singh Chabungbam; Dong eun Kim; Qingyi Shao; Ioannis Kymissis; Hyung Ho Park

doi:10.1016/j.scriptamat.2022.115050

Relationship between resistive switching and Mott transition in atomic layer deposition prepared La₂Ti₂O_7-x thin film

Yue Wang, Minjae Kim, Akendra Singh Chabungbam, Dong eun Kim, Qingyi Shao, Ioannis Kymissis, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This study prepared Mott-metal state thin film La₂Ti₂O_7-x on TiN substrate using atomic layer deposition, and confirmed W/La₂Ti₂O_7-x/TiN clockwise forming-less resistive switching. The resistive switching mechanism was voltage-driven and oxygen vacancy doping-controlled Mott transition. Positive voltage induces the formation of oxygen vacancy in La₂Ti₂O_7-x and change it from Mott-metal to Mott-insulator state, with the process reversible under negative voltage. We show that N doping can reduce the Ti³⁺ ratio in La₂Ti₂O_7-x film, producing a weakly correlated system compared with La₂Ti₂O_7-x film without N-doping. Nitrogen doping also increased resistive switching operation voltage and reduced La₂Ti₂O_7-x film on/off ratio. Thus, La₂Ti₂O_7-x, was a promising candidate for the fabrication of resistive switching device based on Mott transition.

Original language	English
Article number	115050
Journal	Scripta Materialia
Volume	222
DOIs	https://doi.org/10.1016/j.scriptamat.2022.115050
Publication status	Published - 2023 Jan 1

Bibliographical note

Funding Information:
This material is based upon work supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT ( 2018M3D1A1058536 ). This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604 ) and Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. MEST and POSTECH supported the experiments at PLS.

Funding Information:
This material is based upon work supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2018M3D1A1058536). This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604) and Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. MEST and POSTECH supported the experiments at PLS.

Publisher Copyright:
© 2022 Acta Materialia Inc.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Access to Document

10.1016/j.scriptamat.2022.115050

Cite this

@article{f27996d13f404c578df9f12a0ad104ef,

title = "Relationship between resistive switching and Mott transition in atomic layer deposition prepared La2Ti2O7-x thin film",

abstract = "This study prepared Mott-metal state thin film La2Ti2O7-x on TiN substrate using atomic layer deposition, and confirmed W/La2Ti2O7-x/TiN clockwise forming-less resistive switching. The resistive switching mechanism was voltage-driven and oxygen vacancy doping-controlled Mott transition. Positive voltage induces the formation of oxygen vacancy in La2Ti2O7-x and change it from Mott-metal to Mott-insulator state, with the process reversible under negative voltage. We show that N doping can reduce the Ti3+ ratio in La2Ti2O7-x film, producing a weakly correlated system compared with La2Ti2O7-x film without N-doping. Nitrogen doping also increased resistive switching operation voltage and reduced La2Ti2O7-x film on/off ratio. Thus, La2Ti2O7-x, was a promising candidate for the fabrication of resistive switching device based on Mott transition.",

author = "Yue Wang and Minjae Kim and Chabungbam, {Akendra Singh} and Kim, {Dong eun} and Qingyi Shao and Ioannis Kymissis and Park, {Hyung Ho}",

note = "Funding Information: This material is based upon work supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT ( 2018M3D1A1058536 ). This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604 ) and Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. MEST and POSTECH supported the experiments at PLS. Funding Information: This material is based upon work supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2018M3D1A1058536). This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604) and Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. MEST and POSTECH supported the experiments at PLS. Publisher Copyright: {\textcopyright} 2022 Acta Materialia Inc.",

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doi = "10.1016/j.scriptamat.2022.115050",

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AU - Wang, Yue

AU - Kim, Minjae

AU - Chabungbam, Akendra Singh

AU - Kim, Dong eun

AU - Shao, Qingyi

AU - Kymissis, Ioannis

AU - Park, Hyung Ho

N1 - Funding Information: This material is based upon work supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT ( 2018M3D1A1058536 ). This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604 ) and Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. MEST and POSTECH supported the experiments at PLS. Funding Information: This material is based upon work supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2018M3D1A1058536). This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1A2C2087604) and Yue Wang would like to thank the China Scholarship Council (CSC) for financial support. MEST and POSTECH supported the experiments at PLS. Publisher Copyright: © 2022 Acta Materialia Inc.

PY - 2023/1/1

Y1 - 2023/1/1

N2 - This study prepared Mott-metal state thin film La2Ti2O7-x on TiN substrate using atomic layer deposition, and confirmed W/La2Ti2O7-x/TiN clockwise forming-less resistive switching. The resistive switching mechanism was voltage-driven and oxygen vacancy doping-controlled Mott transition. Positive voltage induces the formation of oxygen vacancy in La2Ti2O7-x and change it from Mott-metal to Mott-insulator state, with the process reversible under negative voltage. We show that N doping can reduce the Ti3+ ratio in La2Ti2O7-x film, producing a weakly correlated system compared with La2Ti2O7-x film without N-doping. Nitrogen doping also increased resistive switching operation voltage and reduced La2Ti2O7-x film on/off ratio. Thus, La2Ti2O7-x, was a promising candidate for the fabrication of resistive switching device based on Mott transition.

AB - This study prepared Mott-metal state thin film La2Ti2O7-x on TiN substrate using atomic layer deposition, and confirmed W/La2Ti2O7-x/TiN clockwise forming-less resistive switching. The resistive switching mechanism was voltage-driven and oxygen vacancy doping-controlled Mott transition. Positive voltage induces the formation of oxygen vacancy in La2Ti2O7-x and change it from Mott-metal to Mott-insulator state, with the process reversible under negative voltage. We show that N doping can reduce the Ti3+ ratio in La2Ti2O7-x film, producing a weakly correlated system compared with La2Ti2O7-x film without N-doping. Nitrogen doping also increased resistive switching operation voltage and reduced La2Ti2O7-x film on/off ratio. Thus, La2Ti2O7-x, was a promising candidate for the fabrication of resistive switching device based on Mott transition.

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