Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates

K. S. Jeon, S. W. Kim, Dae Hong Ko, H. Y. Ryu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Owing to the large lattice mismatch between Si and Al(Ga)N, GaN-based structures grown on Si(111) substrates usually have a high density of threading dislocations, which act as non-radiative recombination centers. In this work, we analyze the relationship between threading dislocations and the internal quantum efficiency of GaN-based light-emitting diodes (LEDs) by using various characterization methods such as atomic force microscopy, transmission electron microscopy, cathodoluminescence, photoluminescence, and electroluminescence measurements. Non-radiative recombination centers are found to have a direct effect on the optical properties of optoelectronics devices such as LEDs. Reducing the density of the threading dislocations is demonstrated to be a key parameter in improving the output power of LEDs grown on Si substrates.

Original languageEnglish
Pages (from-to)1085-1088
Number of pages4
JournalJournal of the Korean Physical Society
Volume67
Issue number7
DOIs
Publication statusPublished - 2015 Oct 1

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light emitting diodes
optical properties
optoelectronic devices
cathodoluminescence
electroluminescence
quantum efficiency
atomic force microscopy
photoluminescence
transmission electron microscopy
output

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "Owing to the large lattice mismatch between Si and Al(Ga)N, GaN-based structures grown on Si(111) substrates usually have a high density of threading dislocations, which act as non-radiative recombination centers. In this work, we analyze the relationship between threading dislocations and the internal quantum efficiency of GaN-based light-emitting diodes (LEDs) by using various characterization methods such as atomic force microscopy, transmission electron microscopy, cathodoluminescence, photoluminescence, and electroluminescence measurements. Non-radiative recombination centers are found to have a direct effect on the optical properties of optoelectronics devices such as LEDs. Reducing the density of the threading dislocations is demonstrated to be a key parameter in improving the output power of LEDs grown on Si substrates.",
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Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates. / Jeon, K. S.; Kim, S. W.; Ko, Dae Hong; Ryu, H. Y.

In: Journal of the Korean Physical Society, Vol. 67, No. 7, 01.10.2015, p. 1085-1088.

Research output: Contribution to journalArticle

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