Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates

K. S. Jeon, S. W. Kim, D. H. Ko, H. Y. Ryu

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Abstract

Owing to the large lattice mismatch between Si and Al(Ga)N, GaN-based structures grown on Si(111) substrates usually have a high density of threading dislocations, which act as non-radiative recombination centers. In this work, we analyze the relationship between threading dislocations and the internal quantum efficiency of GaN-based light-emitting diodes (LEDs) by using various characterization methods such as atomic force microscopy, transmission electron microscopy, cathodoluminescence, photoluminescence, and electroluminescence measurements. Non-radiative recombination centers are found to have a direct effect on the optical properties of optoelectronics devices such as LEDs. Reducing the density of the threading dislocations is demonstrated to be a key parameter in improving the output power of LEDs grown on Si substrates.

Original languageEnglish
Pages (from-to)1085-1088
Number of pages4
JournalJournal of the Korean Physical Society
Volume67
Issue number7
DOIs
Publication statusPublished - 2015 Oct 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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