The relative activation energy (E a ∗ ) derived from a pulsed laser-induced crystallization of phase change materials (PCMs) was suggested as a useful quantitative parameter to represent the practical switching speed, energy consumption, and storage reliability of phase change random access memory (PRAM). We employed the time-for-constant-fraction technique using the reflectivity change of PCMs and the irradiated laser power/pulse width. Using the suggested method, the E a ∗ values for the Ge 2 Sb 2 Te 5 (GST), Bi-doped GST (5.9 at%), and Sn-doped GST (17.7 at%) films were determined to be 6.34 × 10 -9 , 4.56 × 10 -9 , and 3.77 × 10 -9 J, respectively, which reflected their expected device performances of PRAM.
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© 2019 The Japan Society of Applied Physics. © 2018 The Japan Society of Applied Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)