Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation

Jung Ho Yoo, Sun Wook Kim, Byoung Gi Min, Hyunchul Sohn, Dae Hong Ko, Mann-Ho Cho

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The effects of oxidation on strain relaxation in Si1-xGe x layers on silicon substrates were investigated. Si 1-xGex layers, with different Ge fractions (x=0.15 and 0.3), were grown on chemically cleaned silicon substrates by an ultrahigh vacuum chemical vapor deposition process. Oxidation at 800 and 900 °C under O 2 ambient in a tube furnace resulted in the production of silicon oxide layers on top and a Ge-rich region in the Si1-xGex films. It was observed that the oxidation of Si0.85 Ge0.15 films at 900 °C produced the relaxation of the misfit strain in the remnant Si 1-xGex layer and the increase in strain in the Ge pile-up layer with increasing oxidation time, while the oxidation at 800 °C produced no changes in the misfit strain in the Si1-xGex layers. The oxidation of Si0.70 Ge0.30 films at 800 °C showed the relaxation of the misfit strain in the remnant Si1-xGex layer with the accumulation of stain in the Ge pile-up layer. However, the oxidation of Si0.70 Ge0.30 layers at 900 °C exhibited the strain relaxation in the Ge pile-up layer after the Ge pile-up was extended into the remaining Si 1-xGex layer, with the formation of misfit dislocations at the interface between the remaining Si1-xGex and Si substrate.

Original languageEnglish
Pages (from-to)1298-1303
Number of pages6
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume28
Issue number6
DOIs
Publication statusPublished - 2010 Jan 1

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Germanium
Silicon
germanium
Oxidation
oxidation
silicon
Piles
piles
Strain relaxation
Substrates
Silicon oxides
Ultrahigh vacuum
Dislocations (crystals)
Chemical vapor deposition
Furnaces
Coloring Agents
silicon oxides
ultrahigh vacuum
furnaces

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "The effects of oxidation on strain relaxation in Si1-xGe x layers on silicon substrates were investigated. Si 1-xGex layers, with different Ge fractions (x=0.15 and 0.3), were grown on chemically cleaned silicon substrates by an ultrahigh vacuum chemical vapor deposition process. Oxidation at 800 and 900 °C under O 2 ambient in a tube furnace resulted in the production of silicon oxide layers on top and a Ge-rich region in the Si1-xGex films. It was observed that the oxidation of Si0.85 Ge0.15 films at 900 °C produced the relaxation of the misfit strain in the remnant Si 1-xGex layer and the increase in strain in the Ge pile-up layer with increasing oxidation time, while the oxidation at 800 °C produced no changes in the misfit strain in the Si1-xGex layers. The oxidation of Si0.70 Ge0.30 films at 800 °C showed the relaxation of the misfit strain in the remnant Si1-xGex layer with the accumulation of stain in the Ge pile-up layer. However, the oxidation of Si0.70 Ge0.30 layers at 900 °C exhibited the strain relaxation in the Ge pile-up layer after the Ge pile-up was extended into the remaining Si 1-xGex layer, with the formation of misfit dislocations at the interface between the remaining Si1-xGex and Si substrate.",
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Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation. / Yoo, Jung Ho; Kim, Sun Wook; Min, Byoung Gi; Sohn, Hyunchul; Ko, Dae Hong; Cho, Mann-Ho.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 28, No. 6, 01.01.2010, p. 1298-1303.

Research output: Contribution to journalArticle

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T1 - Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation

AU - Yoo, Jung Ho

AU - Kim, Sun Wook

AU - Min, Byoung Gi

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AU - Ko, Dae Hong

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AB - The effects of oxidation on strain relaxation in Si1-xGe x layers on silicon substrates were investigated. Si 1-xGex layers, with different Ge fractions (x=0.15 and 0.3), were grown on chemically cleaned silicon substrates by an ultrahigh vacuum chemical vapor deposition process. Oxidation at 800 and 900 °C under O 2 ambient in a tube furnace resulted in the production of silicon oxide layers on top and a Ge-rich region in the Si1-xGex films. It was observed that the oxidation of Si0.85 Ge0.15 films at 900 °C produced the relaxation of the misfit strain in the remnant Si 1-xGex layer and the increase in strain in the Ge pile-up layer with increasing oxidation time, while the oxidation at 800 °C produced no changes in the misfit strain in the Si1-xGex layers. The oxidation of Si0.70 Ge0.30 films at 800 °C showed the relaxation of the misfit strain in the remnant Si1-xGex layer with the accumulation of stain in the Ge pile-up layer. However, the oxidation of Si0.70 Ge0.30 layers at 900 °C exhibited the strain relaxation in the Ge pile-up layer after the Ge pile-up was extended into the remaining Si 1-xGex layer, with the formation of misfit dislocations at the interface between the remaining Si1-xGex and Si substrate.

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