Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation

Jung Ho Yoo, Sun Wook Kim, Byoung Gi Min, Hyunchul Sohn, Dae Hong Ko, Mann Ho Cho

Research output: Contribution to journalArticle

6 Citations (Scopus)


The effects of oxidation on strain relaxation in Si1-xGe x layers on silicon substrates were investigated. Si 1-xGex layers, with different Ge fractions (x=0.15 and 0.3), were grown on chemically cleaned silicon substrates by an ultrahigh vacuum chemical vapor deposition process. Oxidation at 800 and 900 °C under O 2 ambient in a tube furnace resulted in the production of silicon oxide layers on top and a Ge-rich region in the Si1-xGex films. It was observed that the oxidation of Si0.85 Ge0.15 films at 900 °C produced the relaxation of the misfit strain in the remnant Si 1-xGex layer and the increase in strain in the Ge pile-up layer with increasing oxidation time, while the oxidation at 800 °C produced no changes in the misfit strain in the Si1-xGex layers. The oxidation of Si0.70 Ge0.30 films at 800 °C showed the relaxation of the misfit strain in the remnant Si1-xGex layer with the accumulation of stain in the Ge pile-up layer. However, the oxidation of Si0.70 Ge0.30 layers at 900 °C exhibited the strain relaxation in the Ge pile-up layer after the Ge pile-up was extended into the remaining Si 1-xGex layer, with the formation of misfit dislocations at the interface between the remaining Si1-xGex and Si substrate.

Original languageEnglish
Pages (from-to)1298-1303
Number of pages6
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number6
Publication statusPublished - 2010 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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