Relaxation of strained Si1-xGexby dry oxidation

B. G. Min, D. H. Ko, M. H. Cho, T. W. Lee, K. J. Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated strain changes in Si1-xGex layers on silicon substrates upon oxidation. We grew Si1-xGex layers with different Ge fractions (x = 0.15 and 0.3) on chemically cleaned silicon substrates by the UHV CVD process. Oxidation in a vertical furnace at 800 °C and 900 °C in an O2 gas ambient produced a silicon oxide layer and a silicon germanium layer that was richer in Ge-content than initial Si 1-xGex films. Initial compressively strained Si 1-xGex films are fully strained in this range of Ge fractions. The strain in the Ge-rich layer increased and then decreased as the oxidation temperature and time increased. In comparison, the strain of the remaining initial Si1-xGex gradually relaxed with an increase in oxidation time and temperature. The relaxation occurred through the generation of dislocations and defects at the interface of the Si (100) substrate.

Original languageEnglish
Title of host publicationECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS
Subtitle of host publicationNew Materials, Processes and Equipment, 3
Pages41-52
Number of pages12
Edition1
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting - Chicago, IL, United States
Duration: 2007 May 62007 May 10

Publication series

NameECS Transactions
Number1
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period07/5/607/5/10

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Min, B. G., Ko, D. H., Cho, M. H., Lee, T. W., & Choi, K. J. (2007). Relaxation of strained Si1-xGexby dry oxidation. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 (1 ed., pp. 41-52). (ECS Transactions; Vol. 6, No. 1). https://doi.org/10.1149/1.2727386