Reliability analysis of ultra low-temperature polycrystalline silicon thin-film transistors

Hitoshi Ueno, Yuta Sugawara, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Ji Sim Jung, Kyung Bae Park, K. I.M. Jong Man, Jang Yeon Kwon, Takashi Noguchi

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Abstract

We investigated the reliability of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by an ultra lowtemperature process below 200 °C. Their comparatively high reliability was confirmed. It was found by emission observation that hot carriers were hardly generated under the drain avalanche condition. The Joule heating effect was also hardly observed under DC stress at high drain and gate voltage stress. These results show that the hot carrier and Joule heating effects are not the predominant causes of the degradation of ultra low-temperature TFTs. The new degradation mode of the threshold voltage shift by a vertical electric field was found to be dominant in ultra low-temperature TFT.

Original languageEnglish
Pages (from-to)1303-1307
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number3 B
DOIs
Publication statusPublished - 2007 Mar 16

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Ueno, H., Sugawara, Y., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Jung, J. S., Park, K. B., Jong Man, K. I. M., Kwon, J. Y., & Noguchi, T. (2007). Reliability analysis of ultra low-temperature polycrystalline silicon thin-film transistors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(3 B), 1303-1307. https://doi.org/10.1143/JJAP.46.1303