Reliability assessment of 1.55-μm vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests

Keun Ho Rhew, Su Chang Jeon, Dae Hee Lee, Byueng Su Yoo, Ilgu Yun

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

In this paper, the long-term reliability of all monolithic 1.55-μm etched-mesa vertical cavity surface emitting lasers (VCSELs) with tunnel junction is investigated via high-temperature storage tests and accelerated life tests. Characteristic variations depend on the operating conditions are examined via the threshold current, the optical output power, and the dark current. The median device lifetime is extrapolated and the activation energy of the VCSELs is calculated based on the reliability testing results. In addition, the degradation mechanism of the tested VCSELs is analyzed using the correlation between the current-voltage characteristics (I-V) and the device lifetime. From these results, the long-term reliability of the VCSEL test structures for high-speed optical communication systems can be determined and the device parameters, such as dark current, can be used as a monitoring factor for estimating reliability of the VCSELs.

Original languageEnglish
Pages (from-to)42-50
Number of pages9
JournalMicroelectronics Reliability
Volume49
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1

Fingerprint

Tunnel junctions
Surface emitting lasers
surface emitting lasers
tunnel junctions
Aging of materials
cavities
Dark currents
dark current
Temperature
accelerated life tests
life (durability)
mesas
Current voltage characteristics
Optical communication
threshold currents
optical communication
telecommunication
Communication systems
estimating
Activation energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{7431608b1dc74c33834de7ba6d6cb7a0,
title = "Reliability assessment of 1.55-μm vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests",
abstract = "In this paper, the long-term reliability of all monolithic 1.55-μm etched-mesa vertical cavity surface emitting lasers (VCSELs) with tunnel junction is investigated via high-temperature storage tests and accelerated life tests. Characteristic variations depend on the operating conditions are examined via the threshold current, the optical output power, and the dark current. The median device lifetime is extrapolated and the activation energy of the VCSELs is calculated based on the reliability testing results. In addition, the degradation mechanism of the tested VCSELs is analyzed using the correlation between the current-voltage characteristics (I-V) and the device lifetime. From these results, the long-term reliability of the VCSEL test structures for high-speed optical communication systems can be determined and the device parameters, such as dark current, can be used as a monitoring factor for estimating reliability of the VCSELs.",
author = "Rhew, {Keun Ho} and Jeon, {Su Chang} and Lee, {Dae Hee} and Yoo, {Byueng Su} and Ilgu Yun",
year = "2009",
month = "1",
day = "1",
doi = "10.1016/j.microrel.2008.10.008",
language = "English",
volume = "49",
pages = "42--50",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "1",

}

Reliability assessment of 1.55-μm vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests. / Rhew, Keun Ho; Jeon, Su Chang; Lee, Dae Hee; Yoo, Byueng Su; Yun, Ilgu.

In: Microelectronics Reliability, Vol. 49, No. 1, 01.01.2009, p. 42-50.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Reliability assessment of 1.55-μm vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests

AU - Rhew, Keun Ho

AU - Jeon, Su Chang

AU - Lee, Dae Hee

AU - Yoo, Byueng Su

AU - Yun, Ilgu

PY - 2009/1/1

Y1 - 2009/1/1

N2 - In this paper, the long-term reliability of all monolithic 1.55-μm etched-mesa vertical cavity surface emitting lasers (VCSELs) with tunnel junction is investigated via high-temperature storage tests and accelerated life tests. Characteristic variations depend on the operating conditions are examined via the threshold current, the optical output power, and the dark current. The median device lifetime is extrapolated and the activation energy of the VCSELs is calculated based on the reliability testing results. In addition, the degradation mechanism of the tested VCSELs is analyzed using the correlation between the current-voltage characteristics (I-V) and the device lifetime. From these results, the long-term reliability of the VCSEL test structures for high-speed optical communication systems can be determined and the device parameters, such as dark current, can be used as a monitoring factor for estimating reliability of the VCSELs.

AB - In this paper, the long-term reliability of all monolithic 1.55-μm etched-mesa vertical cavity surface emitting lasers (VCSELs) with tunnel junction is investigated via high-temperature storage tests and accelerated life tests. Characteristic variations depend on the operating conditions are examined via the threshold current, the optical output power, and the dark current. The median device lifetime is extrapolated and the activation energy of the VCSELs is calculated based on the reliability testing results. In addition, the degradation mechanism of the tested VCSELs is analyzed using the correlation between the current-voltage characteristics (I-V) and the device lifetime. From these results, the long-term reliability of the VCSEL test structures for high-speed optical communication systems can be determined and the device parameters, such as dark current, can be used as a monitoring factor for estimating reliability of the VCSELs.

UR - http://www.scopus.com/inward/record.url?scp=58149127268&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149127268&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2008.10.008

DO - 10.1016/j.microrel.2008.10.008

M3 - Article

AN - SCOPUS:58149127268

VL - 49

SP - 42

EP - 50

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 1

ER -