Reliability assessment of multiple quantum well avalanche photodiodes

Ilgu Yun, Hicham M. Menkara, Yang Wang, Ismail H. Oguzman, Jan Kolnik, Kevin F. Brennan, Gary S. May, Christopher J. Summers, Brent K. Wagner

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The reliability of doped-barrier AlGaAs/GaAs multi-quantum well avalanche photodiodes fabricated by MBE is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron-beam induced current (EBIC) method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

Original languageEnglish
Pages (from-to)200-204
Number of pages5
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 1995 Jan 1
EventProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
Duration: 1995 Apr 41995 Apr 6

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Yun, I., Menkara, H. M., Wang, Y., Oguzman, I. H., Kolnik, J., Brennan, K. F., May, G. S., Summers, C. J., & Wagner, B. K. (1995). Reliability assessment of multiple quantum well avalanche photodiodes. Annual Proceedings - Reliability Physics (Symposium), 200-204.