Abstract
Next-generation memories have been actively researched to replace the existing memories like DRAM and flash in deep sub-micron process technology. Unlike the conventional charge-based memories, next-generation memories utilize the resistive properties of different materials to store and read a data. Among the next-generation memories, Phase Change Memory (PCM) is seen as a good choice for future memory systems, given its good read performance, process compatibility and scaling potential. To enhance the storage density, multi-level cell (MLC) operation is seemed promising which can store more than one bit in each PCM cell. However, MLC operation significantly degrades the reliability of PCM, thus requiring a strong Error Correction Code (ECC) to guarantee correct memory operation. The use of heavyweight ECC comes at cost of significant degradations in storage density, performance and energy efficiency. In this article, we propose a heterogeneous PCM architecture which uses both multi-level cell and single-level cell (SLC) together for a single word line. With highly-reliable SLC cells, the overall array reliability is enhanced. To improve the reliability further, a dynamic self-encoding/decoding scheme is performed before the data is written to the PCM cells. The dynamic scheme automatically determines the locations of MLC and SLC cells and sets the corresponding resistance levels to be programmed. Since the proposed encoding/decoding scheme does not require any additional stages or storages for encoding and decoding, the overhead is negligible. The improved reliability allows to use lighter ECC scheme which in turn helps to improve performance and energy efficiency of the MLC PCM. The experimental results show that the reliability is improved by approximately $10^6$106 times compared to the conventional 4LC and more than $10^3$103 times compared to the existing encoding methods. The performance improvement is 21.5 percent over the conventional 4LC and is more than 4.1 percent higher than the prior encoding techniques. The proposed method is 30.3 percent more energy efficient than the conventional 4LC and this is similar or higher than other energy efficiency improvement methods.
Original language | English |
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Article number | 9141408 |
Pages (from-to) | 1388-1400 |
Number of pages | 13 |
Journal | IEEE Transactions on Computers |
Volume | 70 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2021 Sept 1 |
Bibliographical note
Funding Information:This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea funded by the Ministry of Education under Grant NRF-2018R1D1A1B07049842 and Grant NRF-2020 M3F3A2A01082326, in part by the Ministry of Trade, Industry and Energy through the Korea Semiconductor Research Consortium support program for the development of the future semiconductor device under Grant 10080594, in part by the next generation intelligent semiconductor development by the Ministry of Trade, Industry and Energy (MOTIE) under Grant 20011074, and in part by the 2020 Yonsei University Future-Leading Research Initiative.
Publisher Copyright:
© 1968-2012 IEEE.
All Science Journal Classification (ASJC) codes
- Software
- Theoretical Computer Science
- Hardware and Architecture
- Computational Theory and Mathematics