Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices

Jun Yeong Lim, Ilgu Yun

Research output: Contribution to journalArticle

Abstract

Phase-change memory (PCM) devices are one of the most promising memory devices to replace the flash memory devices in terms of both scalability and performances. However, typically high programming current to operate devices is a fatal problem in comparison with flash memory. Therefore, many studies have been investigated by changing the contact area and optimizing the structure. In addition, in perspective of characteristic of reliability, the drift and noise are the important problem to degrade the characteristic of devices and the flicker noise is one of the crucial factors in amorphous chalcogenide-based PCM devices. In this paper, we examined the pore-like structure, which is one of the promising structures having small reset current, comparing with conventional mushroom structure by the device reliability analysis for flicker noise using TCAD modeling and simulation.

Original languageEnglish
Pages (from-to)1320-1322
Number of pages3
JournalMicroelectronics Reliability
Volume55
Issue number9-10
DOIs
Publication statusPublished - 2015 Aug

Fingerprint

Phase change memory
flicker
Pore structure
porosity
Data storage equipment
Flash memory
Reliability analysis
Computer programming
flash
Scalability
reliability analysis
programming

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{297e5aaceac84a44a9d4938d46fa8bcf,
title = "Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices",
abstract = "Phase-change memory (PCM) devices are one of the most promising memory devices to replace the flash memory devices in terms of both scalability and performances. However, typically high programming current to operate devices is a fatal problem in comparison with flash memory. Therefore, many studies have been investigated by changing the contact area and optimizing the structure. In addition, in perspective of characteristic of reliability, the drift and noise are the important problem to degrade the characteristic of devices and the flicker noise is one of the crucial factors in amorphous chalcogenide-based PCM devices. In this paper, we examined the pore-like structure, which is one of the promising structures having small reset current, comparing with conventional mushroom structure by the device reliability analysis for flicker noise using TCAD modeling and simulation.",
author = "Lim, {Jun Yeong} and Ilgu Yun",
year = "2015",
month = "8",
doi = "10.1016/j.microrel.2015.06.114",
language = "English",
volume = "55",
pages = "1320--1322",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "9-10",

}

Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices. / Lim, Jun Yeong; Yun, Ilgu.

In: Microelectronics Reliability, Vol. 55, No. 9-10, 08.2015, p. 1320-1322.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices

AU - Lim, Jun Yeong

AU - Yun, Ilgu

PY - 2015/8

Y1 - 2015/8

N2 - Phase-change memory (PCM) devices are one of the most promising memory devices to replace the flash memory devices in terms of both scalability and performances. However, typically high programming current to operate devices is a fatal problem in comparison with flash memory. Therefore, many studies have been investigated by changing the contact area and optimizing the structure. In addition, in perspective of characteristic of reliability, the drift and noise are the important problem to degrade the characteristic of devices and the flicker noise is one of the crucial factors in amorphous chalcogenide-based PCM devices. In this paper, we examined the pore-like structure, which is one of the promising structures having small reset current, comparing with conventional mushroom structure by the device reliability analysis for flicker noise using TCAD modeling and simulation.

AB - Phase-change memory (PCM) devices are one of the most promising memory devices to replace the flash memory devices in terms of both scalability and performances. However, typically high programming current to operate devices is a fatal problem in comparison with flash memory. Therefore, many studies have been investigated by changing the contact area and optimizing the structure. In addition, in perspective of characteristic of reliability, the drift and noise are the important problem to degrade the characteristic of devices and the flicker noise is one of the crucial factors in amorphous chalcogenide-based PCM devices. In this paper, we examined the pore-like structure, which is one of the promising structures having small reset current, comparing with conventional mushroom structure by the device reliability analysis for flicker noise using TCAD modeling and simulation.

UR - http://www.scopus.com/inward/record.url?scp=84943448449&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84943448449&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2015.06.114

DO - 10.1016/j.microrel.2015.06.114

M3 - Article

AN - SCOPUS:84943448449

VL - 55

SP - 1320

EP - 1322

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 9-10

ER -