Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination

Kyung Park, Hyun Woo Park, Hyun Soo Shin, Jonguk Bae, Kwon Shik Park, Inbyeong Kang, Kwun Bum Chung, Jang Yeon Kwon

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.

Original languageEnglish
Article number7180350
Pages (from-to)2900-2905
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume62
Issue number9
DOIs
Publication statusPublished - 2015 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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