Reliability of MIM HAO capacitor for 70NM DRAM

Kwon Hong, Deok Sin Kil, Hyun Kyung Woo, Joosung Kim, Han Sang Song, Ki Seon Park, Seung Jin Yeom, Hong Seon Yang, Jae Sung Roh, Hyunchul Sohn, Jin Woong Kim, Sung Wook Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In order to verify the package reliability of MIM HAO capacitor module, mass productive 256M DDR processes with 0.10μm design rule were adopted. The used capacitor dielectrics were HAH and HfxAlyOz and showed Tox.eq of 12Å and Lc of < 0.2fA/cell, respectively. With proper thermal compensation for adjusting the cell Vt, we could get high probe test yield, and high package yield when MIM HAO capacitor was introduced instead of SIS Al 2 O 3 capacitor. With package samples, refresh time of device did not degrade after IR and EFR stresses and finally, we could confirm the reliability of MIM HAO capacitor in package level through long term test of operation lifetime.

Original languageEnglish
Title of host publication2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
Pages686-687
Number of pages2
Publication statusPublished - 2005 Dec 15
Event2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual - San Jose, CA, United States
Duration: 2005 Apr 172005 Apr 21

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
CountryUnited States
CitySan Jose, CA
Period05/4/1705/4/21

Fingerprint

Dynamic random access storage
Capacitors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hong, K., Kil, D. S., Woo, H. K., Kim, J., Song, H. S., Park, K. S., ... Park, S. W. (2005). Reliability of MIM HAO capacitor for 70NM DRAM. In 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual (pp. 686-687). (IEEE International Reliability Physics Symposium Proceedings).
Hong, Kwon ; Kil, Deok Sin ; Woo, Hyun Kyung ; Kim, Joosung ; Song, Han Sang ; Park, Ki Seon ; Yeom, Seung Jin ; Yang, Hong Seon ; Roh, Jae Sung ; Sohn, Hyunchul ; Kim, Jin Woong ; Park, Sung Wook. / Reliability of MIM HAO capacitor for 70NM DRAM. 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. 2005. pp. 686-687 (IEEE International Reliability Physics Symposium Proceedings).
@inproceedings{9d0fd79e3bbe40e2bc5bf4d7ea0fa3d5,
title = "Reliability of MIM HAO capacitor for 70NM DRAM",
abstract = "In order to verify the package reliability of MIM HAO capacitor module, mass productive 256M DDR processes with 0.10μm design rule were adopted. The used capacitor dielectrics were HAH and HfxAlyOz and showed Tox.eq of 12{\AA} and Lc of < 0.2fA/cell, respectively. With proper thermal compensation for adjusting the cell Vt, we could get high probe test yield, and high package yield when MIM HAO capacitor was introduced instead of SIS Al 2 O 3 capacitor. With package samples, refresh time of device did not degrade after IR and EFR stresses and finally, we could confirm the reliability of MIM HAO capacitor in package level through long term test of operation lifetime.",
author = "Kwon Hong and Kil, {Deok Sin} and Woo, {Hyun Kyung} and Joosung Kim and Song, {Han Sang} and Park, {Ki Seon} and Yeom, {Seung Jin} and Yang, {Hong Seon} and Roh, {Jae Sung} and Hyunchul Sohn and Kim, {Jin Woong} and Park, {Sung Wook}",
year = "2005",
month = "12",
day = "15",
language = "English",
isbn = "0780388038",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "686--687",
booktitle = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual",

}

Hong, K, Kil, DS, Woo, HK, Kim, J, Song, HS, Park, KS, Yeom, SJ, Yang, HS, Roh, JS, Sohn, H, Kim, JW & Park, SW 2005, Reliability of MIM HAO capacitor for 70NM DRAM. in 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. IEEE International Reliability Physics Symposium Proceedings, pp. 686-687, 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual, San Jose, CA, United States, 05/4/17.

Reliability of MIM HAO capacitor for 70NM DRAM. / Hong, Kwon; Kil, Deok Sin; Woo, Hyun Kyung; Kim, Joosung; Song, Han Sang; Park, Ki Seon; Yeom, Seung Jin; Yang, Hong Seon; Roh, Jae Sung; Sohn, Hyunchul; Kim, Jin Woong; Park, Sung Wook.

2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. 2005. p. 686-687 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Reliability of MIM HAO capacitor for 70NM DRAM

AU - Hong, Kwon

AU - Kil, Deok Sin

AU - Woo, Hyun Kyung

AU - Kim, Joosung

AU - Song, Han Sang

AU - Park, Ki Seon

AU - Yeom, Seung Jin

AU - Yang, Hong Seon

AU - Roh, Jae Sung

AU - Sohn, Hyunchul

AU - Kim, Jin Woong

AU - Park, Sung Wook

PY - 2005/12/15

Y1 - 2005/12/15

N2 - In order to verify the package reliability of MIM HAO capacitor module, mass productive 256M DDR processes with 0.10μm design rule were adopted. The used capacitor dielectrics were HAH and HfxAlyOz and showed Tox.eq of 12Å and Lc of < 0.2fA/cell, respectively. With proper thermal compensation for adjusting the cell Vt, we could get high probe test yield, and high package yield when MIM HAO capacitor was introduced instead of SIS Al 2 O 3 capacitor. With package samples, refresh time of device did not degrade after IR and EFR stresses and finally, we could confirm the reliability of MIM HAO capacitor in package level through long term test of operation lifetime.

AB - In order to verify the package reliability of MIM HAO capacitor module, mass productive 256M DDR processes with 0.10μm design rule were adopted. The used capacitor dielectrics were HAH and HfxAlyOz and showed Tox.eq of 12Å and Lc of < 0.2fA/cell, respectively. With proper thermal compensation for adjusting the cell Vt, we could get high probe test yield, and high package yield when MIM HAO capacitor was introduced instead of SIS Al 2 O 3 capacitor. With package samples, refresh time of device did not degrade after IR and EFR stresses and finally, we could confirm the reliability of MIM HAO capacitor in package level through long term test of operation lifetime.

UR - http://www.scopus.com/inward/record.url?scp=28744458510&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28744458510&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0780388038

T3 - IEEE International Reliability Physics Symposium Proceedings

SP - 686

EP - 687

BT - 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual

ER -

Hong K, Kil DS, Woo HK, Kim J, Song HS, Park KS et al. Reliability of MIM HAO capacitor for 70NM DRAM. In 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual. 2005. p. 686-687. (IEEE International Reliability Physics Symposium Proceedings).