Abstract
We have investigated the reliability of the inverted-staggered etch stopper structure oxide-based TFTs under negative gate bias stress combined with 400 nm wavelength light illumination and the relationship between the carrier concentration at the channel and the extent of V th shift. It was found that the photo-induced holes cause the severe V th degradation at the beginning of stress and the hole trapping rate of a single hole is not altered with the increase of the hole concentration. In oxide-based TFTs, the hole concentration at the channel is the determinant factor of the reliability.
| Original language | English |
|---|---|
| Title of host publication | Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011 |
| Pages | 253-257 |
| Number of pages | 5 |
| DOIs | |
| Publication status | Published - 2012 Jan 1 |
| Event | 2011 MRS Spring Meeting - San Francisco, CA, United States Duration: 2011 Apr 25 → 2011 Apr 29 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 1321 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2011 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 11/4/25 → 11/4/29 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Lee, S. Y., Kim, S. J., Lee, Y., Lee, W. G., Yoon, K. S., Kwon, J. Y., & Han, M. K. (2012). Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011 (pp. 253-257). (Materials Research Society Symposium Proceedings; Vol. 1321). https://doi.org/10.1557/opl.2011.950