Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination

Soo Yeon Lee, Sun Jae Kim, Yongwook Lee, Woo Geun Lee, Kap Soo Yoon, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the reliability of the inverted-staggered etch stopper structure oxide-based TFTs under negative gate bias stress combined with 400 nm wavelength light illumination and the relationship between the carrier concentration at the channel and the extent of V th shift. It was found that the photo-induced holes cause the severe V th degradation at the beginning of stress and the hole trapping rate of a single hole is not altered with the increase of the hole concentration. In oxide-based TFTs, the hole concentration at the channel is the determinant factor of the reliability.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
Pages253-257
Number of pages5
DOIs
Publication statusPublished - 2012 Jan 1
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2011 Apr 252011 Apr 29

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1321
ISSN (Print)0272-9172

Other

Other2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period11/4/2511/4/29

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Lee, S. Y., Kim, S. J., Lee, Y., Lee, W. G., Yoon, K. S., Kwon, J. Y., & Han, M. K. (2012). Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011 (pp. 253-257). (Materials Research Society Symposium Proceedings; Vol. 1321). https://doi.org/10.1557/opl.2011.950