Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination

Soo Yeon Lee; Sun Jae Kim; Yongwook Lee; Woo Geun Lee; Kap Soo Yoon; Jang Yeon Kwon; Min Koo Han

doi:10.1557/opl.2011.950

Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination

Soo Yeon Lee, Sun Jae Kim, Yongwook Lee, Woo Geun Lee, Kap Soo Yoon, Jang Yeon Kwon, Min Koo Han

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated the reliability of the inverted-staggered etch stopper structure oxide-based TFTs under negative gate bias stress combined with 400 nm wavelength light illumination and the relationship between the carrier concentration at the channel and the extent of V _th shift. It was found that the photo-induced holes cause the severe V _th degradation at the beginning of stress and the hole trapping rate of a single hole is not altered with the increase of the hole concentration. In oxide-based TFTs, the hole concentration at the channel is the determinant factor of the reliability.

Original language	English
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
Pages	253-257
Number of pages	5
DOIs	https://doi.org/10.1557/opl.2011.950
Publication status	Published - 2012
Event	2011 MRS Spring Meeting - San Francisco, CA, United States Duration: 2011 Apr 25 → 2011 Apr 29

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1321
ISSN (Print)	0272-9172

Other

Other	2011 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	11/4/25 → 11/4/29

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Lee, S. Y., Kim, S. J., Lee, Y., Lee, W. G., Yoon, K. S., Kwon, J. Y., & Han, M. K. (2012). Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011 (pp. 253-257). (Materials Research Society Symposium Proceedings; Vol. 1321). https://doi.org/10.1557/opl.2011.950

Lee, Soo Yeon ; Kim, Sun Jae ; Lee, Yongwook ; Lee, Woo Geun ; Yoon, Kap Soo ; Kwon, Jang Yeon ; Han, Min Koo. / Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. 2012. pp. 253-257 (Materials Research Society Symposium Proceedings).

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title = "Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination",

abstract = "We have investigated the reliability of the inverted-staggered etch stopper structure oxide-based TFTs under negative gate bias stress combined with 400 nm wavelength light illumination and the relationship between the carrier concentration at the channel and the extent of V th shift. It was found that the photo-induced holes cause the severe V th degradation at the beginning of stress and the hole trapping rate of a single hole is not altered with the increase of the hole concentration. In oxide-based TFTs, the hole concentration at the channel is the determinant factor of the reliability.",

author = "Lee, {Soo Yeon} and Kim, {Sun Jae} and Yongwook Lee and Lee, {Woo Geun} and Yoon, {Kap Soo} and Kwon, {Jang Yeon} and Han, {Min Koo}",

year = "2012",

doi = "10.1557/opl.2011.950",

language = "English",

isbn = "9781605112985",

series = "Materials Research Society Symposium Proceedings",

pages = "253--257",

booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011",

}

Lee, SY, Kim, SJ, Lee, Y, Lee, WG, Yoon, KS, Kwon, JY & Han, MK 2012, Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. Materials Research Society Symposium Proceedings, vol. 1321, pp. 253-257, 2011 MRS Spring Meeting, San Francisco, CA, United States, 11/4/25. https://doi.org/10.1557/opl.2011.950

Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination. / Lee, Soo Yeon; Kim, Sun Jae; Lee, Yongwook; Lee, Woo Geun; Yoon, Kap Soo; Kwon, Jang Yeon; Han, Min Koo.

Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. 2012. p. 253-257 (Materials Research Society Symposium Proceedings; Vol. 1321).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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