Reliability of planar InP-InGaAs avalanche photodiodes with recess etching

Jihoun Jung, Yong Hwan Kwon, Kyung Sook Hyun, Ilgu Yun

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

This letter presents the reliability of planar InP-InGaAs avalanche photodiodes (APDs) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The activation energy of the degradation mechanism and device median lifetime were estimated. Based on the test results, it is concluded that the planar InP-InGaAs APDs with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.

Original languageEnglish
Pages (from-to)1160-1162
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number8
DOIs
Publication statusPublished - 2002 Jan 1

Fingerprint

recesses
Avalanche photodiodes
avalanches
photodiodes
Etching
Optical receivers
etching
receivers
accelerated life tests
Dark currents
dark current
Electric breakdown
electrical faults
Activation energy
degradation
activation energy
Degradation
life (durability)
Monitoring

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Jung, Jihoun ; Kwon, Yong Hwan ; Hyun, Kyung Sook ; Yun, Ilgu. / Reliability of planar InP-InGaAs avalanche photodiodes with recess etching. In: IEEE Photonics Technology Letters. 2002 ; Vol. 14, No. 8. pp. 1160-1162.
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Reliability of planar InP-InGaAs avalanche photodiodes with recess etching. / Jung, Jihoun; Kwon, Yong Hwan; Hyun, Kyung Sook; Yun, Ilgu.

In: IEEE Photonics Technology Letters, Vol. 14, No. 8, 01.01.2002, p. 1160-1162.

Research output: Contribution to journalArticle

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