Reliability of planar InP-InGaAs avalanche photodiodes with recess etching

Jihoun Jung, Yong Hwan Kwon, Kyung Sook Hyun, Ilgu Yun

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This letter presents the reliability of planar InP-InGaAs avalanche photodiodes (APDs) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The activation energy of the degradation mechanism and device median lifetime were estimated. Based on the test results, it is concluded that the planar InP-InGaAs APDs with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.

Original languageEnglish
Pages (from-to)1160-1162
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number8
Publication statusPublished - 2002 Jan 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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