This letter presents the reliability of planar InP-InGaAs avalanche photodiodes (APDs) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The activation energy of the degradation mechanism and device median lifetime were estimated. Based on the test results, it is concluded that the planar InP-InGaAs APDs with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.
Bibliographical noteFunding Information:
Manuscript received November 6, 2001; revised April 2, 2002. This work was supported by the Electronics and Telecommunications Research Institute in Korea. J. Jung and I. Yun are with the Department of Electrical and Electronic Engineering, Yonsei University, 120-749 Seoul, Korea (e-mail: firstname.lastname@example.org). Y. H. Kwon is with the Telecom. Basic Research Lab., Electronics and Telecommunications Research Institute, 305-600 Daejeon, Korea. K. S. Hyun is with the School of Electronics and Information Engineering, Sejong University, 143-747 Seoul, Korea. Publisher Item Identifier S 1041-1135(02)06014-7.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering