Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

Min Sang Park, Yonghyun Kim, Kyong Taek Lee, Chang Yong Kang, Byoung Gi Min, Jungwoo Oh, Prashant Majhi, Hsing Huang Tseng, Jack C. Lee, Sanjay K. Banerjee, Jeong Soo Lee, Raj Jammy, Yoon Ha Jeong

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The effects of extension profile engineering to suppress boron transient enhanced diffusion (TED) are investigated in Si/SiGe channel metal-oxide-semiconductor field-effect transistor (MOSFET). In performance, Ge pre-amorphization implantation (PAI) samples exhibit low drain-induced barrier lowering (DIBL) and a good Ion/Ioff ratio due to suppressed boron diffusion. In reliability, negative bias temperature instability (NBTI) degradation is reduced in Si/SiGe channel pMOSFETs, but hot carrier injection (HCI) degradation is worsened, especially in Ge PAI samples. The results suggest that HCI is an important factor in limiting device life time in Si/SiGe channel pMOSFETs.

Original languageEnglish
Pages (from-to)80-83
Number of pages4
JournalMicroelectronic Engineering
Volume112
DOIs
Publication statusPublished - 2013

Bibliographical note

Funding Information:
This research was supported by WCU(World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R31-2008-000-10100-0). Also this work was partially supported by the National Center for Nano materials Technology (NCNT), the “System IC 2010” project and BK21 program of the Korea Ministry of Knowledge Economy.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs'. Together they form a unique fingerprint.

Cite this