Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

Min Sang Park, Yonghyun Kim, Kyong Taek Lee, Chang Yong Kang, Byoung Gi Min, Jungwoo Oh, Prashant Majhi, Hsing Huang Tseng, Jack C. Lee, Sanjay K. Banerjee, Jeong Soo Lee, Raj Jammy, Yoon Ha Jeong

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effects of extension profile engineering to suppress boron transient enhanced diffusion (TED) are investigated in Si/SiGe channel metal-oxide-semiconductor field-effect transistor (MOSFET). In performance, Ge pre-amorphization implantation (PAI) samples exhibit low drain-induced barrier lowering (DIBL) and a good Ion/Ioff ratio due to suppressed boron diffusion. In reliability, negative bias temperature instability (NBTI) degradation is reduced in Si/SiGe channel pMOSFETs, but hot carrier injection (HCI) degradation is worsened, especially in Ge PAI samples. The results suggest that HCI is an important factor in limiting device life time in Si/SiGe channel pMOSFETs.

Original languageEnglish
Pages (from-to)80-83
Number of pages4
JournalMicroelectronic Engineering
Volume112
DOIs
Publication statusPublished - 2013 Jun 25

Fingerprint

Boron
Hot carriers
Amorphization
boron
carrier injection
Metals
Degradation
implantation
MOSFET devices
metals
degradation
Ions
metal oxide semiconductors
field effect transistors
engineering
life (durability)
profiles
ions
temperature
Negative bias temperature instability

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Park, Min Sang ; Kim, Yonghyun ; Lee, Kyong Taek ; Kang, Chang Yong ; Min, Byoung Gi ; Oh, Jungwoo ; Majhi, Prashant ; Tseng, Hsing Huang ; Lee, Jack C. ; Banerjee, Sanjay K. ; Lee, Jeong Soo ; Jammy, Raj ; Jeong, Yoon Ha. / Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs. In: Microelectronic Engineering. 2013 ; Vol. 112. pp. 80-83.
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abstract = "The effects of extension profile engineering to suppress boron transient enhanced diffusion (TED) are investigated in Si/SiGe channel metal-oxide-semiconductor field-effect transistor (MOSFET). In performance, Ge pre-amorphization implantation (PAI) samples exhibit low drain-induced barrier lowering (DIBL) and a good Ion/Ioff ratio due to suppressed boron diffusion. In reliability, negative bias temperature instability (NBTI) degradation is reduced in Si/SiGe channel pMOSFETs, but hot carrier injection (HCI) degradation is worsened, especially in Ge PAI samples. The results suggest that HCI is an important factor in limiting device life time in Si/SiGe channel pMOSFETs.",
author = "Park, {Min Sang} and Yonghyun Kim and Lee, {Kyong Taek} and Kang, {Chang Yong} and Min, {Byoung Gi} and Jungwoo Oh and Prashant Majhi and Tseng, {Hsing Huang} and Lee, {Jack C.} and Banerjee, {Sanjay K.} and Lee, {Jeong Soo} and Raj Jammy and Jeong, {Yoon Ha}",
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Park, MS, Kim, Y, Lee, KT, Kang, CY, Min, BG, Oh, J, Majhi, P, Tseng, HH, Lee, JC, Banerjee, SK, Lee, JS, Jammy, R & Jeong, YH 2013, 'Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs', Microelectronic Engineering, vol. 112, pp. 80-83. https://doi.org/10.1016/j.mee.2013.04.041

Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs. / Park, Min Sang; Kim, Yonghyun; Lee, Kyong Taek; Kang, Chang Yong; Min, Byoung Gi; Oh, Jungwoo; Majhi, Prashant; Tseng, Hsing Huang; Lee, Jack C.; Banerjee, Sanjay K.; Lee, Jeong Soo; Jammy, Raj; Jeong, Yoon Ha.

In: Microelectronic Engineering, Vol. 112, 25.06.2013, p. 80-83.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

AU - Park, Min Sang

AU - Kim, Yonghyun

AU - Lee, Kyong Taek

AU - Kang, Chang Yong

AU - Min, Byoung Gi

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Tseng, Hsing Huang

AU - Lee, Jack C.

AU - Banerjee, Sanjay K.

AU - Lee, Jeong Soo

AU - Jammy, Raj

AU - Jeong, Yoon Ha

PY - 2013/6/25

Y1 - 2013/6/25

N2 - The effects of extension profile engineering to suppress boron transient enhanced diffusion (TED) are investigated in Si/SiGe channel metal-oxide-semiconductor field-effect transistor (MOSFET). In performance, Ge pre-amorphization implantation (PAI) samples exhibit low drain-induced barrier lowering (DIBL) and a good Ion/Ioff ratio due to suppressed boron diffusion. In reliability, negative bias temperature instability (NBTI) degradation is reduced in Si/SiGe channel pMOSFETs, but hot carrier injection (HCI) degradation is worsened, especially in Ge PAI samples. The results suggest that HCI is an important factor in limiting device life time in Si/SiGe channel pMOSFETs.

AB - The effects of extension profile engineering to suppress boron transient enhanced diffusion (TED) are investigated in Si/SiGe channel metal-oxide-semiconductor field-effect transistor (MOSFET). In performance, Ge pre-amorphization implantation (PAI) samples exhibit low drain-induced barrier lowering (DIBL) and a good Ion/Ioff ratio due to suppressed boron diffusion. In reliability, negative bias temperature instability (NBTI) degradation is reduced in Si/SiGe channel pMOSFETs, but hot carrier injection (HCI) degradation is worsened, especially in Ge PAI samples. The results suggest that HCI is an important factor in limiting device life time in Si/SiGe channel pMOSFETs.

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