Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

Min Sang Park, Yonghyun Kim, Kyong Taek Lee, Chang Yong Kang, Byoung Gi Min, Jungwoo Oh, Prashant Majhi, Hsing Huang Tseng, Jack C. Lee, Sanjay K. Banerjee, Jeong Soo Lee, Raj Jammy, Yoon Ha Jeong

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Abstract

The effects of extension profile engineering to suppress boron transient enhanced diffusion (TED) are investigated in Si/SiGe channel metal-oxide-semiconductor field-effect transistor (MOSFET). In performance, Ge pre-amorphization implantation (PAI) samples exhibit low drain-induced barrier lowering (DIBL) and a good Ion/Ioff ratio due to suppressed boron diffusion. In reliability, negative bias temperature instability (NBTI) degradation is reduced in Si/SiGe channel pMOSFETs, but hot carrier injection (HCI) degradation is worsened, especially in Ge PAI samples. The results suggest that HCI is an important factor in limiting device life time in Si/SiGe channel pMOSFETs.

Original languageEnglish
Pages (from-to)80-83
Number of pages4
JournalMicroelectronic Engineering
Volume112
DOIs
Publication statusPublished - 2013 Jun 25

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Park, M. S., Kim, Y., Lee, K. T., Kang, C. Y., Min, B. G., Oh, J., Majhi, P., Tseng, H. H., Lee, J. C., Banerjee, S. K., Lee, J. S., Jammy, R., & Jeong, Y. H. (2013). Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs. Microelectronic Engineering, 112, 80-83. https://doi.org/10.1016/j.mee.2013.04.041