This paper presents the reliability of single diffused planar InP/InGaAs avalanche photodiodes (APDs), which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APDs and bias-temperature tests to evaluate long-term reliability at temperature from 200 to 250°C. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The lifetime of the APDs is estimated by a degradation activation energy. Based on the test results, it is concluded that the single diffused planar InP/InGaAs APDs show the sufficient reliability for practical 10-Gb/s optical receivers.
|Number of pages||2|
|Journal||Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium|
|Publication status||Published - 2002 Jan 1|
All Science Journal Classification (ASJC) codes
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering