Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiOx passivation layer

Hyun Sik Seo, Jong Uk Bae, Dae Hwan Kim, Yu Jin Park, Chang Dong Kim, In Byeong Kang, In Jae Chung, Ji Hyuk Choi, Jae Min Myoung

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Titanium oxide (TiOx) passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source-drain electrode was deposited on an a-IGZO layer, and the TiOx passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to 0.78 V decade-1 and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at 280°C for 1 h.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number9
DOIs
Publication statusPublished - 2009 Jul 31

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Titanium oxides
Thin film transistors
Zinc oxide
Passivation
titanium oxides
zinc oxides
passivity
Oxide films
indium
transistors
thin films
Oxygen
Plasmas
oxygen plasma
Molybdenum
Titanium

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Seo, Hyun Sik ; Bae, Jong Uk ; Kim, Dae Hwan ; Park, Yu Jin ; Kim, Chang Dong ; Kang, In Byeong ; Chung, In Jae ; Choi, Ji Hyuk ; Myoung, Jae Min. / Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiOx passivation layer. In: Electrochemical and Solid-State Letters. 2009 ; Vol. 12, No. 9.
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abstract = "Titanium oxide (TiOx) passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source-drain electrode was deposited on an a-IGZO layer, and the TiOx passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to 0.78 V decade-1 and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at 280°C for 1 h.",
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Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiOx passivation layer. / Seo, Hyun Sik; Bae, Jong Uk; Kim, Dae Hwan; Park, Yu Jin; Kim, Chang Dong; Kang, In Byeong; Chung, In Jae; Choi, Ji Hyuk; Myoung, Jae Min.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 9, 31.07.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiOx passivation layer

AU - Seo, Hyun Sik

AU - Bae, Jong Uk

AU - Kim, Dae Hwan

AU - Park, Yu Jin

AU - Kim, Chang Dong

AU - Kang, In Byeong

AU - Chung, In Jae

AU - Choi, Ji Hyuk

AU - Myoung, Jae Min

PY - 2009/7/31

Y1 - 2009/7/31

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AB - Titanium oxide (TiOx) passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source-drain electrode was deposited on an a-IGZO layer, and the TiOx passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to 0.78 V decade-1 and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at 280°C for 1 h.

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