Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiOx passivation layer

Hyun Sik Seo, Jong Uk Bae, Dae Hwan Kim, Yu Jin Park, Chang Dong Kim, In Byeong Kang, In Jae Chung, Ji Hyuk Choi, Jae Min Myoung

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43 Citations (Scopus)

Abstract

Titanium oxide (TiOx) passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source-drain electrode was deposited on an a-IGZO layer, and the TiOx passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to 0.78 V decade-1 and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at 280°C for 1 h.

Original languageEnglish
Pages (from-to)H348-H351
JournalElectrochemical and Solid-State Letters
Volume12
Issue number9
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Seo, H. S., Bae, J. U., Kim, D. H., Park, Y. J., Kim, C. D., Kang, I. B., Chung, I. J., Choi, J. H., & Myoung, J. M. (2009). Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiOx passivation layer. Electrochemical and Solid-State Letters, 12(9), H348-H351. https://doi.org/10.1149/1.3168522