Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiOx passivation layer

Hyun Sik Seo; Jong Uk Bae; Dae Hwan Kim; Yu Jin Park; Chang Dong Kim; In Byeong Kang; In Jae Chung; Ji Hyuk Choi; Jae Min Myoung

doi:10.1149/1.3168522

Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiO_x passivation layer

Hyun Sik Seo, Jong Uk Bae, Dae Hwan Kim, Yu Jin Park, Chang Dong Kim, In Byeong Kang, In Jae Chung, Ji Hyuk Choi, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

Titanium oxide (TiO_x) passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source-drain electrode was deposited on an a-IGZO layer, and the TiO_x passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to 0.78 V decade^-1 and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at 280°C for 1 h.

Original language	English
Pages (from-to)	H348-H351
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1149/1.3168522
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3168522

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title = "Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiOx passivation layer",

abstract = "Titanium oxide (TiOx) passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source-drain electrode was deposited on an a-IGZO layer, and the TiOx passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to 0.78 V decade-1 and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at 280°C for 1 h.",

author = "Seo, {Hyun Sik} and Bae, {Jong Uk} and Kim, {Dae Hwan} and Park, {Yu Jin} and Kim, {Chang Dong} and Kang, {In Byeong} and Chung, {In Jae} and Choi, {Ji Hyuk} and Myoung, {Jae Min}",

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T1 - Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiOx passivation layer

AU - Seo, Hyun Sik

AU - Bae, Jong Uk

AU - Kim, Dae Hwan

AU - Park, Yu Jin

AU - Kim, Chang Dong

AU - Kang, In Byeong

AU - Chung, In Jae

AU - Choi, Ji Hyuk

AU - Myoung, Jae Min

PY - 2009

Y1 - 2009

N2 - Titanium oxide (TiOx) passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source-drain electrode was deposited on an a-IGZO layer, and the TiOx passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to 0.78 V decade-1 and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at 280°C for 1 h.

AB - Titanium oxide (TiOx) passivation layer was employed and optimized to stabilize the performance of the bottom gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). A molybdenum/titanium (Mo/Ti) source-drain electrode was deposited on an a-IGZO layer, and the TiOx passivation layer was formed by oxidizing the Ti layer using oxygen plasma after etching the Mo layer. By increasing the oxygen plasma treatment time, the subthreshold slope and leakage current of the a-IGZO TFTs were improved to 0.78 V decade-1 and 0.3 pA, respectively, and the degradation of the TFT performance was not observed, even after thermal treatment at 280°C for 1 h.

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Reliable bottom gate amorphous indium-gallium-zinc oxide thin-film transistors with TiO_x passivation layer

Abstract

All Science Journal Classification (ASJC) codes

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