Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature

D. K. Hwang; Ji Hoon Park; Jeong M. Choi; Jiyoul Lee; S. H. Jeong; Eugene Kim; Jae Hoon Kim; Seongil Im

doi:10.1557/proc-0905-dd05-15

Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature

D. K. Hwang, Ji Hoon Park, Jeong M. Choi, Jiyoul Lee, S. H. Jeong, Eugene Kim, Jae Hoon Kim, Seongil Im

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p⁺-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm²/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm ²/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 ⁴ due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

Original language	English
Title of host publication	Materials for Transparent Electronics
Publisher	Materials Research Society
Pages	47-52
Number of pages	6
ISBN (Print)	1558998608, 9781558998605
DOIs	https://doi.org/10.1557/proc-0905-dd05-15
Publication status	Published - 2005
Event	2005 MRS Fall Meeting - Boston, MA, United States Duration: 2005 Nov 28 → 2005 Dec 2

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	905
ISSN (Print)	0272-9172

Other

Other	2005 MRS Fall Meeting
Country	United States
City	Boston, MA
Period	05/11/28 → 05/12/2

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Hwang, D. K., Park, J. H., Choi, J. M., Lee, J., Jeong, S. H., Kim, E., Kim, J. H., & Im, S. (2005). Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. In Materials for Transparent Electronics (pp. 47-52). (Materials Research Society Symposium Proceedings; Vol. 905). Materials Research Society. https://doi.org/10.1557/proc-0905-dd05-15

Hwang, D. K. ; Park, Ji Hoon ; Choi, Jeong M. ; Lee, Jiyoul ; Jeong, S. H. ; Kim, Eugene ; Kim, Jae Hoon ; Im, Seongil. / Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. Materials for Transparent Electronics. Materials Research Society, 2005. pp. 47-52 (Materials Research Society Symposium Proceedings).

@inproceedings{3a7e266ecd314d13b935f2cde25abe3e,

title = "Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature",

abstract = "We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.",

author = "Hwang, {D. K.} and Park, {Ji Hoon} and Choi, {Jeong M.} and Jiyoul Lee and Jeong, {S. H.} and Eugene Kim and Kim, {Jae Hoon} and Seongil Im",

year = "2005",

doi = "10.1557/proc-0905-dd05-15",

language = "English",

isbn = "1558998608",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "47--52",

booktitle = "Materials for Transparent Electronics",

address = "United States",

}

Hwang, DK, Park, JH, Choi, JM, Lee, J, Jeong, SH, Kim, E, Kim, JH & Im, S 2005, Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. in Materials for Transparent Electronics. Materials Research Society Symposium Proceedings, vol. 905, Materials Research Society, pp. 47-52, 2005 MRS Fall Meeting, Boston, MA, United States, 05/11/28. https://doi.org/10.1557/proc-0905-dd05-15

Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. / Hwang, D. K.; Park, Ji Hoon; Choi, Jeong M.; Lee, Jiyoul; Jeong, S. H.; Kim, Eugene; Kim, Jae Hoon ; Im, Seongil.

Materials for Transparent Electronics. Materials Research Society, 2005. p. 47-52 (Materials Research Society Symposium Proceedings; Vol. 905).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature

AU - Hwang, D. K.

AU - Park, Ji Hoon

AU - Choi, Jeong M.

AU - Lee, Jiyoul

AU - Jeong, S. H.

AU - Kim, Eugene

AU - Kim, Jae Hoon

AU - Im, Seongil

PY - 2005

Y1 - 2005

N2 - We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

AB - We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

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M3 - Conference contribution

AN - SCOPUS:34249946311

SN - 1558998608

SN - 9781558998605

T3 - Materials Research Society Symposium Proceedings

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BT - Materials for Transparent Electronics

PB - Materials Research Society

T2 - 2005 MRS Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

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