Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature

D. K. Hwang, Ji Hoon Park, Jeong M. Choi, Jiyoul Lee, S. H. Jeong, Eugene Kim, Jae Hoon Kim, Seongil Im

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

Original languageEnglish
Title of host publicationMaterials for Transparent Electronics
Pages47-52
Number of pages6
Publication statusPublished - 2005 Dec 1
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 2

Publication series

NameMaterials Research Society Symposium Proceedings
Volume905
ISSN (Print)0272-9172

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period05/11/2805/12/2

Fingerprint

Gate dielectrics
Thin film transistors
Polymers
transistors
polymers
thin films
Curing
curing
charging
Temperature
Electron injection
temperature
Spin coating
saturation
Polymer films
coating
poly(4-vinylphenol)
pentacene
insulators
injection

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hwang, D. K., Park, J. H., Choi, J. M., Lee, J., Jeong, S. H., Kim, E., ... Im, S. (2005). Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. In Materials for Transparent Electronics (pp. 47-52). (Materials Research Society Symposium Proceedings; Vol. 905).
Hwang, D. K. ; Park, Ji Hoon ; Choi, Jeong M. ; Lee, Jiyoul ; Jeong, S. H. ; Kim, Eugene ; Kim, Jae Hoon ; Im, Seongil. / Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. Materials for Transparent Electronics. 2005. pp. 47-52 (Materials Research Society Symposium Proceedings).
@inproceedings{3a7e266ecd314d13b935f2cde25abe3e,
title = "Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature",
abstract = "We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.",
author = "Hwang, {D. K.} and Park, {Ji Hoon} and Choi, {Jeong M.} and Jiyoul Lee and Jeong, {S. H.} and Eugene Kim and Kim, {Jae Hoon} and Seongil Im",
year = "2005",
month = "12",
day = "1",
language = "English",
isbn = "1558998608",
series = "Materials Research Society Symposium Proceedings",
pages = "47--52",
booktitle = "Materials for Transparent Electronics",

}

Hwang, DK, Park, JH, Choi, JM, Lee, J, Jeong, SH, Kim, E, Kim, JH & Im, S 2005, Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. in Materials for Transparent Electronics. Materials Research Society Symposium Proceedings, vol. 905, pp. 47-52, 2005 MRS Fall Meeting, Boston, MA, United States, 05/11/28.

Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. / Hwang, D. K.; Park, Ji Hoon; Choi, Jeong M.; Lee, Jiyoul; Jeong, S. H.; Kim, Eugene; Kim, Jae Hoon; Im, Seongil.

Materials for Transparent Electronics. 2005. p. 47-52 (Materials Research Society Symposium Proceedings; Vol. 905).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature

AU - Hwang, D. K.

AU - Park, Ji Hoon

AU - Choi, Jeong M.

AU - Lee, Jiyoul

AU - Jeong, S. H.

AU - Kim, Eugene

AU - Kim, Jae Hoon

AU - Im, Seongil

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

AB - We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.

UR - http://www.scopus.com/inward/record.url?scp=34249946311&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249946311&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:34249946311

SN - 1558998608

SN - 9781558998605

T3 - Materials Research Society Symposium Proceedings

SP - 47

EP - 52

BT - Materials for Transparent Electronics

ER -

Hwang DK, Park JH, Choi JM, Lee J, Jeong SH, Kim E et al. Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. In Materials for Transparent Electronics. 2005. p. 47-52. (Materials Research Society Symposium Proceedings).