Abstract
We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.
| Original language | English |
|---|---|
| Title of host publication | Materials for Transparent Electronics |
| Pages | 47-52 |
| Number of pages | 6 |
| Publication status | Published - 2005 Dec 1 |
| Event | 2005 MRS Fall Meeting - Boston, MA, United States Duration: 2005 Nov 28 → 2005 Dec 2 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 905 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2005 MRS Fall Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 05/11/28 → 05/12/2 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature. / Hwang, D. K.; Park, Ji Hoon; Choi, Jeong M.; Lee, Jiyoul; Jeong, S. H.; Kim, Eugene; Kim, Jae Hoon; Im, Seongil.
Materials for Transparent Electronics. 2005. p. 47-52 (Materials Research Society Symposium Proceedings; Vol. 905).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature
AU - Hwang, D. K.
AU - Park, Ji Hoon
AU - Choi, Jeong M.
AU - Lee, Jiyoul
AU - Jeong, S. H.
AU - Kim, Eugene
AU - Kim, Jae Hoon
AU - Im, Seongil
PY - 2005/12/1
Y1 - 2005/12/1
N2 - We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.
AB - We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.
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M3 - Conference contribution
AN - SCOPUS:34249946311
SN - 1558998608
SN - 9781558998605
T3 - Materials Research Society Symposium Proceedings
SP - 47
EP - 52
BT - Materials for Transparent Electronics
ER -