TY - GEN
T1 - Reliable semi-transparent pentacene thin-film transistors with polymer gate dielectric layers cured at an optimum temperature
AU - Hwang, D. K.
AU - Park, Ji Hoon
AU - Choi, Jeong M.
AU - Lee, Jiyoul
AU - Jeong, S. H.
AU - Kim, Eugene
AU - Kim, Jae Hoon
AU - Im, Seongil
PY - 2005
Y1 - 2005
N2 - We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.
AB - We report on the insulator-charging-effects of poly-4-vinylphenol (PVP) gate dielectric on the reliabilities of pentacene thin-film transistors (TFTs), Our PVP films were prepared by spin coating and curing at various temperatures (155, 175, and 200 °C). Evaluated using Au/PVP/p+-Si structures, the dielectric strength of PVP films cured at 175 °C was superior to those of the other PVP films cured at different temperatures. Although saturation current and field mobility (∼0,13 cm2/Vs) obtained from a TFT with PVP film cured at 200 °C appeared higher than those (∼0.07 cm 2/Vs) from the device with 175 °C-cured polymer film, the TFT prepared at 200 °C revealed a low on/off current ratio of less than 10 4 due to its high off-state current and also unreliable saturation behavior under repetitive gate voltage sweep, The unreliable behavior is due to the dielectric-charging caused by gate-electron-injection. We thus conclude that there are some optimal PVP-curing conditions to improve the reliability of pentacene TFT.
UR - http://www.scopus.com/inward/record.url?scp=34249946311&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34249946311&partnerID=8YFLogxK
U2 - 10.1557/proc-0905-dd05-15
DO - 10.1557/proc-0905-dd05-15
M3 - Conference contribution
AN - SCOPUS:34249946311
SN - 1558998608
SN - 9781558998605
T3 - Materials Research Society Symposium Proceedings
SP - 47
EP - 52
BT - Materials for Transparent Electronics
PB - Materials Research Society
T2 - 2005 MRS Fall Meeting
Y2 - 28 November 2005 through 2 December 2005
ER -