Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile

Eunseok Oh, Sangwoo Lim

Research output: Contribution to journalArticle

Abstract

The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 1015 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.

Original languageEnglish
Pages (from-to)230-237
Number of pages8
JournalJournal of Industrial and Engineering Chemistry
Volume77
DOIs
Publication statusPublished - 2019 Sep 25

Fingerprint

Dimethyl sulfoxide
Photoresists
Dimethyl Sulfoxide
Acetonitrile
Ions
Ion implantation
acetonitrile
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Cite this

@article{bf082de5dce240e89ffd73ff9eb05ed2,
title = "Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile",
abstract = "The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol{\%} of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 1015 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.",
author = "Eunseok Oh and Sangwoo Lim",
year = "2019",
month = "9",
day = "25",
doi = "10.1016/j.jiec.2019.04.042",
language = "English",
volume = "77",
pages = "230--237",
journal = "Journal of Industrial and Engineering Chemistry",
issn = "1226-086X",
publisher = "Korean Society of Industrial Engineering Chemistry",

}

TY - JOUR

T1 - Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile

AU - Oh, Eunseok

AU - Lim, Sangwoo

PY - 2019/9/25

Y1 - 2019/9/25

N2 - The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 1015 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.

AB - The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 1015 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.

UR - http://www.scopus.com/inward/record.url?scp=85065016139&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065016139&partnerID=8YFLogxK

U2 - 10.1016/j.jiec.2019.04.042

DO - 10.1016/j.jiec.2019.04.042

M3 - Article

AN - SCOPUS:85065016139

VL - 77

SP - 230

EP - 237

JO - Journal of Industrial and Engineering Chemistry

JF - Journal of Industrial and Engineering Chemistry

SN - 1226-086X

ER -