Abstract
The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 1015 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.
| Original language | English |
|---|---|
| Pages (from-to) | 230-237 |
| Number of pages | 8 |
| Journal | Journal of Industrial and Engineering Chemistry |
| Volume | 77 |
| DOIs | |
| Publication status | Published - 2019 Sep 25 |
Bibliographical note
Funding Information:This work was supported by the Industrial Strategic Technology Development Program ( 10049099 , Development of Total Front-End Cleaning Technologies for Ge and III–V Semiconductor Channels), which is funded by the Korean Ministry of Trade, Industry & Energy ; and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF-2016R1D1A1B03936347 ).
Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (10049099, Development of Total Front-End Cleaning Technologies for Ge and III–V Semiconductor Channels), which is funded by the Korean Ministry of Trade, Industry & Energy; and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347).
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)