Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile

Eunseok Oh; Sangwoo Lim

doi:10.1016/j.jiec.2019.04.042

Removal of high-dose P⁺ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile

Eunseok Oh, Sangwoo Lim

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The mixture of dimethyl sulfoxide and acetonitrile removed the P⁺ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 10¹⁵ ions/cm² at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.

Original language	English
Pages (from-to)	230-237
Number of pages	8
Journal	Journal of Industrial and Engineering Chemistry
Volume	77
DOIs	https://doi.org/10.1016/j.jiec.2019.04.042
Publication status	Published - 2019 Sep 25

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program ( 10049099 , Development of Total Front-End Cleaning Technologies for Ge and III–V Semiconductor Channels), which is funded by the Korean Ministry of Trade, Industry & Energy ; and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF-2016R1D1A1B03936347 ).

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (10049099, Development of Total Front-End Cleaning Technologies for Ge and III–V Semiconductor Channels), which is funded by the Korean Ministry of Trade, Industry & Energy; and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347).

Publisher Copyright:
© 2019 The Korean Society of Industrial and Engineering Chemistry

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)

Access to Document

10.1016/j.jiec.2019.04.042

Cite this

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title = "Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile",

abstract = "The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 1015 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.",

author = "Eunseok Oh and Sangwoo Lim",

note = "Funding Information: This work was supported by the Industrial Strategic Technology Development Program ( 10049099 , Development of Total Front-End Cleaning Technologies for Ge and III–V Semiconductor Channels), which is funded by the Korean Ministry of Trade, Industry & Energy ; and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF-2016R1D1A1B03936347 ). Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10049099, Development of Total Front-End Cleaning Technologies for Ge and III–V Semiconductor Channels), which is funded by the Korean Ministry of Trade, Industry & Energy; and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347). Publisher Copyright: {\textcopyright} 2019 The Korean Society of Industrial and Engineering Chemistry",

year = "2019",

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AU - Oh, Eunseok

AU - Lim, Sangwoo

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program ( 10049099 , Development of Total Front-End Cleaning Technologies for Ge and III–V Semiconductor Channels), which is funded by the Korean Ministry of Trade, Industry & Energy ; and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( NRF-2016R1D1A1B03936347 ). Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10049099, Development of Total Front-End Cleaning Technologies for Ge and III–V Semiconductor Channels), which is funded by the Korean Ministry of Trade, Industry & Energy; and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1D1A1B03936347). Publisher Copyright: © 2019 The Korean Society of Industrial and Engineering Chemistry

PY - 2019/9/25

Y1 - 2019/9/25

N2 - The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 1015 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.

AB - The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 1015 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.

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