The mixture of dimethyl sulfoxide and acetonitrile removed the P+ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 1015 ions/cm2 at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)