Removal of interfacial layer in HfO2 gate stack by post-gate cleaning using NF3/NH3 dry cleaning technique

Min Seon Lee, Hoon Jung Oh, Joo Hee Lee, In Geun Lee, Woo Gon Shin, Sung Yong Kang, Dae Hong Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces XII
EditorsMarc Heyns, Marc Meuris, Paul W. Mertens, Marc Meuris, Marc Heyns
PublisherTrans Tech Publications Ltd
Pages11-15
Number of pages5
ISBN (Electronic)9783038352426
DOIs
Publication statusPublished - 2015 Jan 1
Event12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2014 - Brussels, Belgium
Duration: 2014 Sep 212014 Sep 24

Publication series

NameSolid State Phenomena
Volume219
ISSN (Electronic)1662-9779

Other

Other12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2014
CountryBelgium
CityBrussels
Period14/9/2114/9/24

Fingerprint

Dry cleaning
cleaning
Cleaning

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lee, M. S., Oh, H. J., Lee, J. H., Lee, I. G., Shin, W. G., Kang, S. Y., & Ko, D. H. (2015). Removal of interfacial layer in HfO2 gate stack by post-gate cleaning using NF3/NH3 dry cleaning technique. In M. Heyns, M. Meuris, P. W. Mertens, M. Meuris, & M. Heyns (Eds.), Ultra Clean Processing of Semiconductor Surfaces XII (pp. 11-15). (Solid State Phenomena; Vol. 219). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.219.11
Lee, Min Seon ; Oh, Hoon Jung ; Lee, Joo Hee ; Lee, In Geun ; Shin, Woo Gon ; Kang, Sung Yong ; Ko, Dae Hong. / Removal of interfacial layer in HfO2 gate stack by post-gate cleaning using NF3/NH3 dry cleaning technique. Ultra Clean Processing of Semiconductor Surfaces XII. editor / Marc Heyns ; Marc Meuris ; Paul W. Mertens ; Marc Meuris ; Marc Heyns. Trans Tech Publications Ltd, 2015. pp. 11-15 (Solid State Phenomena).
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Lee, MS, Oh, HJ, Lee, JH, Lee, IG, Shin, WG, Kang, SY & Ko, DH 2015, Removal of interfacial layer in HfO2 gate stack by post-gate cleaning using NF3/NH3 dry cleaning technique. in M Heyns, M Meuris, PW Mertens, M Meuris & M Heyns (eds), Ultra Clean Processing of Semiconductor Surfaces XII. Solid State Phenomena, vol. 219, Trans Tech Publications Ltd, pp. 11-15, 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2014, Brussels, Belgium, 14/9/21. https://doi.org/10.4028/www.scientific.net/SSP.219.11

Removal of interfacial layer in HfO2 gate stack by post-gate cleaning using NF3/NH3 dry cleaning technique. / Lee, Min Seon; Oh, Hoon Jung; Lee, Joo Hee; Lee, In Geun; Shin, Woo Gon; Kang, Sung Yong; Ko, Dae Hong.

Ultra Clean Processing of Semiconductor Surfaces XII. ed. / Marc Heyns; Marc Meuris; Paul W. Mertens; Marc Meuris; Marc Heyns. Trans Tech Publications Ltd, 2015. p. 11-15 (Solid State Phenomena; Vol. 219).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee MS, Oh HJ, Lee JH, Lee IG, Shin WG, Kang SY et al. Removal of interfacial layer in HfO2 gate stack by post-gate cleaning using NF3/NH3 dry cleaning technique. In Heyns M, Meuris M, Mertens PW, Meuris M, Heyns M, editors, Ultra Clean Processing of Semiconductor Surfaces XII. Trans Tech Publications Ltd. 2015. p. 11-15. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.219.11