Organic solvents can effectively remove photoresists on III-V channels without damage or etching of the channel material during the process. In this study, a two-step sequential photoresist removal process using two different organic solvents was developed to remove implanted ArF and KrF photoresists at room temperature. The effects of organic solvents with either low molar volumes or high affinities for photoresists were evaluated to find a proper combination that can effectively remove high-dose implanted photoresists without damaging GaAs surfaces. The performance of formamide, acetonitrile, nitromethane, and monoethanolamine for the removal of ion-implanted ArF and KrF photoresists were compared using a two-step sequential photoresist removal process followed by treatment in dimethyl sulfoxide (DMSO). Among the various combinations, the acetonitrile + DMSO two-step sequence exhibited the best removal of photoresists that underwent ion implantation at doses of 5 × 10 13 -5 × 10 15 atoms/cm 2 on both flat and trench-structured GaAs surfaces. The ability of the two-step process using organic solvents to remove the photoresists can be explained by considering the affinities of solvents for a polymer and its permeability through the photoresist.
Bibliographical noteFunding Information:
The authors thank Dongwoo Fine-Chem for conducting the I-line photolithography and providing the KrF photoresist. The authors also thank Dongjin SemiChem for providing the ArF photoresist. This work was supported by the Industrial Strategic Technology Development Program ( 10049099 , Development of Total Front-End Cleaning Technologies for Ge and III–V Semiconductor Channels), which is funded by the Korean Ministry of Trade, Industry & Energy; by the Priority Research Centers Program (2009–0093823) through the National Research Foundation of Korea (NRF), which is funded by the Ministry of Education; and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2013R1A1A2008788).
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films