Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors

Tae Soo Jung, Si Joon Kim, Chul Ho Kim, Joohye Jung, Jae Won Na, Mardhiah M. Sabri, Heon Je Kim

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2888
Number of pages	2893
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	9
Publication status	Published - 2015 Sept

Cite this

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title = "Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors",

author = "Jung, {Tae Soo} and Kim, {Si Joon} and Kim, {Chul Ho} and Joohye Jung and Na, {Jae Won} and Sabri, {Mardhiah M.} and Kim, {Heon Je}",

year = "2015",

month = sep,

language = "English",

volume = "62",

pages = "2888",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors

AU - Jung, Tae Soo

AU - Kim, Si Joon

AU - Kim, Chul Ho

AU - Jung, Joohye

AU - Na, Jae Won

AU - Sabri, Mardhiah M.

AU - Kim, Heon Je

PY - 2015/9

Y1 - 2015/9

M3 - Article

SN - 0018-9383

VL - 62

SP - 2888

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

ER -