Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors

Tae Soo Jung, Si Joon Kim, Chul Ho Kim, Joohye Jung, Jae Won Na, Mardhiah M. Sabri, Heon Je Kim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)2888
Number of pages2893
JournalIEEE Transactions on Electron Devices
Issue number9
Publication statusPublished - 2015 Sept

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