Reply to "comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"

Jin Sung Kim, Hee Sung Lee, Seongil Im

Research output: Contribution to journalLetter

Original languageEnglish
Pages (from-to)1716-1717
Number of pages2
JournalACS Nano
Volume10
Issue number2
DOIs
Publication statusPublished - 2016 Feb 23

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MESFET devices
field effect transistors
conduction
metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Reply to {"}comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed{"}",
author = "Kim, {Jin Sung} and Lee, {Hee Sung} and Seongil Im",
year = "2016",
month = "2",
day = "23",
doi = "10.1021/acsnano.5b08198",
language = "English",
volume = "10",
pages = "1716--1717",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "2",

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T1 - Reply to "comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"

AU - Kim, Jin Sung

AU - Lee, Hee Sung

AU - Im, Seongil

PY - 2016/2/23

Y1 - 2016/2/23

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DO - 10.1021/acsnano.5b08198

M3 - Letter

AN - SCOPUS:84960172972

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SP - 1716

EP - 1717

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 2

ER -