Reply to "comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"

Jin Sung Kim, Hee Sung Lee, Seongil Im

Research output: Contribution to journalLetter

Original languageEnglish
Pages (from-to)1716-1717
Number of pages2
JournalACS Nano
Volume10
Issue number2
DOIs
Publication statusPublished - 2016 Feb 23

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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