Reply to "comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"

Jin Sung Kim, Hee Sung Lee, Seongil Im

Research output: Contribution to journal › Letter

Original languageEnglish
Pages (from-to)1716-1717
Number of pages2
JournalACS Nano
Volume10
Issue number2
DOIs
Publication statusPublished - 2016 Feb 23

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MESFET devices
field effect transistors
conduction
metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kim, Jin Sung ; Lee, Hee Sung ; Im, Seongil. / Reply to "comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed". In: ACS Nano. 2016 ; Vol. 10, No. 2. pp. 1716-1717.
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title = "Reply to {"}comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed{"}",
author = "Kim, {Jin Sung} and Lee, {Hee Sung} and Seongil Im",
year = "2016",
month = "2",
day = "23",
doi = "10.1021/acsnano.5b08198",
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pages = "1716--1717",
journal = "ACS Nano",
issn = "1936-0851",
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Kim, JS, Lee, HS & Im, S 2016, 'Reply to "comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"', ACS Nano, vol. 10, no. 2, pp. 1716-1717. https://doi.org/10.1021/acsnano.5b08198

Reply to "comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed". / Kim, Jin Sung; Lee, Hee Sung; Im, Seongil.

In: ACS Nano, Vol. 10, No. 2, 23.02.2016, p. 1716-1717.

Research output: Contribution to journal › Letter

TY - JOUR

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AU - Lee, Hee Sung

AU - Im, Seongil

PY - 2016/2/23

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VL - 10

SP - 1716

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JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

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ER -

Kim JS, Lee HS, Im S. Reply to "comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed". ACS Nano. 2016 Feb 23;10(2):1716-1717. https://doi.org/10.1021/acsnano.5b08198

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