Research Update

Relativistic origin of slow electron-hole recombination in hybrid halide perovskite solar cells

Pooya Azarhoosh, Scott McKechnie, Jarvist M. Frost, Aron Walsh, Mark Van Schilfgaarde

Research output: Contribution to journalArticle

95 Citations (Scopus)

Abstract

The hybrid perovskite CH3NH3PbI3 (MAPI) exhibits long minority-carrier lifetimes and diffusion lengths. We show that slow recombination originates from a spin-split indirect-gap. Large internal electric fields act on spin-orbit-coupled band extrema, shifting band-edges to inequivalent wavevectors, making the fundamental gap indirect. From a description of photoluminescence within the quasiparticle self-consistent GW approximation for MAPI, CdTe, and GaAs, we predict carrier lifetime as a function of light intensity and temperature. At operating conditions we find radiative recombination in MAPI is reduced by a factor of more than 350 compared to direct gap behavior. The indirect gap is retained with dynamic disorder.

Original languageEnglish
Article number091501
JournalAPL Materials
Volume4
Issue number9
DOIs
Publication statusPublished - 2016 Sep 1

Fingerprint

Carrier lifetime
Electrons
Perovskite
Photoluminescence
Orbits
Electric fields
Temperature
Perovskite solar cells
microbial alkaline proteinase inhibitor

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)

Cite this

Azarhoosh, Pooya ; McKechnie, Scott ; Frost, Jarvist M. ; Walsh, Aron ; Van Schilfgaarde, Mark. / Research Update : Relativistic origin of slow electron-hole recombination in hybrid halide perovskite solar cells. In: APL Materials. 2016 ; Vol. 4, No. 9.
@article{d60aeb8185a44c12a4032ad0d49e62e5,
title = "Research Update: Relativistic origin of slow electron-hole recombination in hybrid halide perovskite solar cells",
abstract = "The hybrid perovskite CH3NH3PbI3 (MAPI) exhibits long minority-carrier lifetimes and diffusion lengths. We show that slow recombination originates from a spin-split indirect-gap. Large internal electric fields act on spin-orbit-coupled band extrema, shifting band-edges to inequivalent wavevectors, making the fundamental gap indirect. From a description of photoluminescence within the quasiparticle self-consistent GW approximation for MAPI, CdTe, and GaAs, we predict carrier lifetime as a function of light intensity and temperature. At operating conditions we find radiative recombination in MAPI is reduced by a factor of more than 350 compared to direct gap behavior. The indirect gap is retained with dynamic disorder.",
author = "Pooya Azarhoosh and Scott McKechnie and Frost, {Jarvist M.} and Aron Walsh and {Van Schilfgaarde}, Mark",
year = "2016",
month = "9",
day = "1",
doi = "10.1063/1.4955028",
language = "English",
volume = "4",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

Research Update : Relativistic origin of slow electron-hole recombination in hybrid halide perovskite solar cells. / Azarhoosh, Pooya; McKechnie, Scott; Frost, Jarvist M.; Walsh, Aron; Van Schilfgaarde, Mark.

In: APL Materials, Vol. 4, No. 9, 091501, 01.09.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Research Update

T2 - Relativistic origin of slow electron-hole recombination in hybrid halide perovskite solar cells

AU - Azarhoosh, Pooya

AU - McKechnie, Scott

AU - Frost, Jarvist M.

AU - Walsh, Aron

AU - Van Schilfgaarde, Mark

PY - 2016/9/1

Y1 - 2016/9/1

N2 - The hybrid perovskite CH3NH3PbI3 (MAPI) exhibits long minority-carrier lifetimes and diffusion lengths. We show that slow recombination originates from a spin-split indirect-gap. Large internal electric fields act on spin-orbit-coupled band extrema, shifting band-edges to inequivalent wavevectors, making the fundamental gap indirect. From a description of photoluminescence within the quasiparticle self-consistent GW approximation for MAPI, CdTe, and GaAs, we predict carrier lifetime as a function of light intensity and temperature. At operating conditions we find radiative recombination in MAPI is reduced by a factor of more than 350 compared to direct gap behavior. The indirect gap is retained with dynamic disorder.

AB - The hybrid perovskite CH3NH3PbI3 (MAPI) exhibits long minority-carrier lifetimes and diffusion lengths. We show that slow recombination originates from a spin-split indirect-gap. Large internal electric fields act on spin-orbit-coupled band extrema, shifting band-edges to inequivalent wavevectors, making the fundamental gap indirect. From a description of photoluminescence within the quasiparticle self-consistent GW approximation for MAPI, CdTe, and GaAs, we predict carrier lifetime as a function of light intensity and temperature. At operating conditions we find radiative recombination in MAPI is reduced by a factor of more than 350 compared to direct gap behavior. The indirect gap is retained with dynamic disorder.

UR - http://www.scopus.com/inward/record.url?scp=84979610057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84979610057&partnerID=8YFLogxK

U2 - 10.1063/1.4955028

DO - 10.1063/1.4955028

M3 - Article

VL - 4

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 9

M1 - 091501

ER -