RESET-first bipolar resistive switching due to redox reaction in ALD HfO2 films

Jonggi Kim, Sunghoon Lee, Kyumin Lee, Heedo Na, In Su Mok, Youngjae Kim, Dae Hong Ko, Hyunchul Sohn

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4 Citations (Scopus)


A RESET-first resistive switching mechanism based on a reduction reaction with a thermal annealing process was studied. Through high resolution transmission electron microscopy, electron disperse X-ray, and electron energy loss spectroscopy mapping, the manner in which the oxygen ions migrate at the interface between the HfO2 layer and the top Ti metal electrode during the electroforming, RESET, and SET processes was investigated. It is also demonstrated that the thermal annealing process produced RESET-first resistive switching behavior via the formation of a conductive path, indicating the redox reaction from Ti/HfO2 to TiOx/HfO2-x with the diffusion of oxygen atoms. RESET-first bipolar resistive switching behavior was associated with the formation of a conductive path via a thermal annealing process and the redox reaction of oxygen ions at the interface under external bias.

Original languageEnglish
Pages (from-to)46-51
Number of pages6
JournalMicroelectronic Engineering
Publication statusPublished - 2013

Bibliographical note

Funding Information:
This work was supported by the R&D Program of the Ministry of Knowledge Economy, the industry–university cooperation project of the SK Hynix Semiconductor Inc. and the second stage of the Brain Korea 21 project.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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