RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode

Jonggi Kim, In Su Mok, Sunghoon Lee, Kyumin Lee, Hyunchul Sohn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

RESET-first resistive switching mechanism in HfO 2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO 2 film. The redox phenomenon from Ti/HfO 2 to TiO x/HfO 2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO 2 to TiOx/HfO 2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.

Original languageEnglish
Title of host publication2012 IEEE International Interconnect Technology Conference, IITC 2012
DOIs
Publication statusPublished - 2012 Oct 1
Event2012 IEEE International Interconnect Technology Conference, IITC 2012 - San Jose, CA, United States
Duration: 2012 Jun 42012 Jun 6

Publication series

Name2012 IEEE International Interconnect Technology Conference, IITC 2012

Other

Other2012 IEEE International Interconnect Technology Conference, IITC 2012
CountryUnited States
CitySan Jose, CA
Period12/6/412/6/6

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Kim, J., Mok, I. S., Lee, S., Lee, K., & Sohn, H. (2012). RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode. In 2012 IEEE International Interconnect Technology Conference, IITC 2012 [6251589] (2012 IEEE International Interconnect Technology Conference, IITC 2012). https://doi.org/10.1109/IITC.2012.6251589