RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode

Jonggi Kim, In Su Mok, Sunghoon Lee, Kyumin Lee, Hyunchul Sohn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

RESET-first resistive switching mechanism in HfO 2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO 2 film. The redox phenomenon from Ti/HfO 2 to TiO x/HfO 2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO 2 to TiOx/HfO 2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.

Original languageEnglish
Title of host publication2012 IEEE International Interconnect Technology Conference, IITC 2012
DOIs
Publication statusPublished - 2012 Oct 1
Event2012 IEEE International Interconnect Technology Conference, IITC 2012 - San Jose, CA, United States
Duration: 2012 Jun 42012 Jun 6

Publication series

Name2012 IEEE International Interconnect Technology Conference, IITC 2012

Other

Other2012 IEEE International Interconnect Technology Conference, IITC 2012
CountryUnited States
CitySan Jose, CA
Period12/6/412/6/6

Fingerprint

Electrodes
Redox reactions
Photoelectron spectroscopy
Energy dispersive spectroscopy
Annealing
Transmission electron microscopy
X rays
Scanning electron microscopy
Oxygen
Ions
Temperature
Oxidation-Reduction

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kim, J., Mok, I. S., Lee, S., Lee, K., & Sohn, H. (2012). RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode. In 2012 IEEE International Interconnect Technology Conference, IITC 2012 [6251589] (2012 IEEE International Interconnect Technology Conference, IITC 2012). https://doi.org/10.1109/IITC.2012.6251589
Kim, Jonggi ; Mok, In Su ; Lee, Sunghoon ; Lee, Kyumin ; Sohn, Hyunchul. / RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode. 2012 IEEE International Interconnect Technology Conference, IITC 2012. 2012. (2012 IEEE International Interconnect Technology Conference, IITC 2012).
@inproceedings{973cbff95b9648bf8fa1ad09a8894b35,
title = "RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode",
abstract = "RESET-first resistive switching mechanism in HfO 2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO 2 film. The redox phenomenon from Ti/HfO 2 to TiO x/HfO 2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO 2 to TiOx/HfO 2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.",
author = "Jonggi Kim and Mok, {In Su} and Sunghoon Lee and Kyumin Lee and Hyunchul Sohn",
year = "2012",
month = "10",
day = "1",
doi = "10.1109/IITC.2012.6251589",
language = "English",
isbn = "9781467311380",
series = "2012 IEEE International Interconnect Technology Conference, IITC 2012",
booktitle = "2012 IEEE International Interconnect Technology Conference, IITC 2012",

}

Kim, J, Mok, IS, Lee, S, Lee, K & Sohn, H 2012, RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode. in 2012 IEEE International Interconnect Technology Conference, IITC 2012., 6251589, 2012 IEEE International Interconnect Technology Conference, IITC 2012, 2012 IEEE International Interconnect Technology Conference, IITC 2012, San Jose, CA, United States, 12/6/4. https://doi.org/10.1109/IITC.2012.6251589

RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode. / Kim, Jonggi; Mok, In Su; Lee, Sunghoon; Lee, Kyumin; Sohn, Hyunchul.

2012 IEEE International Interconnect Technology Conference, IITC 2012. 2012. 6251589 (2012 IEEE International Interconnect Technology Conference, IITC 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode

AU - Kim, Jonggi

AU - Mok, In Su

AU - Lee, Sunghoon

AU - Lee, Kyumin

AU - Sohn, Hyunchul

PY - 2012/10/1

Y1 - 2012/10/1

N2 - RESET-first resistive switching mechanism in HfO 2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO 2 film. The redox phenomenon from Ti/HfO 2 to TiO x/HfO 2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO 2 to TiOx/HfO 2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.

AB - RESET-first resistive switching mechanism in HfO 2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO 2 film. The redox phenomenon from Ti/HfO 2 to TiO x/HfO 2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO 2 to TiOx/HfO 2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.

UR - http://www.scopus.com/inward/record.url?scp=84866693807&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866693807&partnerID=8YFLogxK

U2 - 10.1109/IITC.2012.6251589

DO - 10.1109/IITC.2012.6251589

M3 - Conference contribution

AN - SCOPUS:84866693807

SN - 9781467311380

T3 - 2012 IEEE International Interconnect Technology Conference, IITC 2012

BT - 2012 IEEE International Interconnect Technology Conference, IITC 2012

ER -

Kim J, Mok IS, Lee S, Lee K, Sohn H. RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode. In 2012 IEEE International Interconnect Technology Conference, IITC 2012. 2012. 6251589. (2012 IEEE International Interconnect Technology Conference, IITC 2012). https://doi.org/10.1109/IITC.2012.6251589