RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode

Jonggi Kim; In Su Mok; Sunghoon Lee; Kyumin Lee; Hyunchul Sohn

doi:10.1109/IITC.2012.6251589

RESET-first Resistance Switching Mechanism of HfO ₂ films with Ti electrode

Jonggi Kim, In Su Mok, Sunghoon Lee, Kyumin Lee, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

RESET-first resistive switching mechanism in HfO _2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO ₂ film. The redox phenomenon from Ti/HfO ₂ to TiO _x/HfO _2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO ₂ to TiOx/HfO _2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.

Original language	English
Title of host publication	2012 IEEE International Interconnect Technology Conference, IITC 2012
DOIs	https://doi.org/10.1109/IITC.2012.6251589
Publication status	Published - 2012
Event	2012 IEEE International Interconnect Technology Conference, IITC 2012 - San Jose, CA, United States Duration: 2012 Jun 4 → 2012 Jun 6

Publication series

Name	2012 IEEE International Interconnect Technology Conference, IITC 2012

Other

Other	2012 IEEE International Interconnect Technology Conference, IITC 2012
Country/Territory	United States
City	San Jose, CA
Period	12/6/4 → 12/6/6

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/IITC.2012.6251589

Cite this

@inproceedings{973cbff95b9648bf8fa1ad09a8894b35,

title = "RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode",

abstract = "RESET-first resistive switching mechanism in HfO 2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO 2 film. The redox phenomenon from Ti/HfO 2 to TiO x/HfO 2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO 2 to TiOx/HfO 2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.",

author = "Jonggi Kim and Mok, {In Su} and Sunghoon Lee and Kyumin Lee and Hyunchul Sohn",

year = "2012",

doi = "10.1109/IITC.2012.6251589",

language = "English",

isbn = "9781467311380",

series = "2012 IEEE International Interconnect Technology Conference, IITC 2012",

booktitle = "2012 IEEE International Interconnect Technology Conference, IITC 2012",

note = "2012 IEEE International Interconnect Technology Conference, IITC 2012 ; Conference date: 04-06-2012 Through 06-06-2012",

}

Kim, J, Mok, IS, Lee, S, Lee, K & Sohn, H 2012, RESET-first Resistance Switching Mechanism of HfO ₂ films with Ti electrode. in 2012 IEEE International Interconnect Technology Conference, IITC 2012., 6251589, 2012 IEEE International Interconnect Technology Conference, IITC 2012, 2012 IEEE International Interconnect Technology Conference, IITC 2012, San Jose, CA, United States, 12/6/4. https://doi.org/10.1109/IITC.2012.6251589

RESET-first Resistance Switching Mechanism of HfO ₂ films with Ti electrode. / Kim, Jonggi; Mok, In Su; Lee, Sunghoon et al.

2012 IEEE International Interconnect Technology Conference, IITC 2012. 2012. 6251589 (2012 IEEE International Interconnect Technology Conference, IITC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - RESET-first Resistance Switching Mechanism of HfO 2 films with Ti electrode

AU - Kim, Jonggi

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N2 - RESET-first resistive switching mechanism in HfO 2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO 2 film. The redox phenomenon from Ti/HfO 2 to TiO x/HfO 2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO 2 to TiOx/HfO 2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.

AB - RESET-first resistive switching mechanism in HfO 2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO 2 film. The redox phenomenon from Ti/HfO 2 to TiO x/HfO 2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO 2 to TiOx/HfO 2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.

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