Reset-first resistive random access memory (RRAM) devices were demonstrated for offstoichiometric Ni1−x O thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni1−x O based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the Ni1−x O films, and X-ray photoemission spectroscopy showed that the Ni3+ valence state in the Ni1−x O films increased with increasing oxygen partial pressure. Conductive atomic force microscopy showed that the conductivity of the Ni1−x O films increased with increasing oxygen partial pressure during deposition, possibly contributing to the reset-first switching of the Ni1−x O films.
|Publication status||Published - 2022 Jul 1|
Bibliographical noteFunding Information:
Funding: This work was supported by the Ministry of Trade, Industry and Energy, Korea under the Industrial Strategic Technology Development Program (Grant no. 100680075).
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)