Reset First Resistive Switching in Ni1−x O Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering

Dae Woo Kim; Tae Ho Kim; Jae Yeon Kim; Hyun Chul Sohn

doi:10.3390/nano12132231

Reset First Resistive Switching in Ni_1−x O Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering

Dae Woo Kim, Tae Ho Kim, Jae Yeon Kim, Hyun Chul Sohn

Research output: Contribution to journal › Article › peer-review

Abstract

Reset-first resistive random access memory (RRAM) devices were demonstrated for offstoichiometric Ni_1−x O thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni_1−x O based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the Ni_1−x O films, and X-ray photoemission spectroscopy showed that the Ni³⁺ valence state in the Ni_1−x O films increased with increasing oxygen partial pressure. Conductive atomic force microscopy showed that the conductivity of the Ni_1−x O films increased with increasing oxygen partial pressure during deposition, possibly contributing to the reset-first switching of the Ni_1−x O films.

Original language	English
Article number	2231
Journal	Nanomaterials
Volume	12
Issue number	13
DOIs	https://doi.org/10.3390/nano12132231
Publication status	Published - 2022 Jul 1

Bibliographical note

Funding Information:
Funding: This work was supported by the Ministry of Trade, Industry and Energy, Korea under the Industrial Strategic Technology Development Program (Grant no. 100680075).

Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)

Access to Document

10.3390/nano12132231

Cite this

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title = "Reset First Resistive Switching in Ni1−x O Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering",

abstract = "Reset-first resistive random access memory (RRAM) devices were demonstrated for offstoichiometric Ni1−x O thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni1−x O based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the Ni1−x O films, and X-ray photoemission spectroscopy showed that the Ni3+ valence state in the Ni1−x O films increased with increasing oxygen partial pressure. Conductive atomic force microscopy showed that the conductivity of the Ni1−x O films increased with increasing oxygen partial pressure during deposition, possibly contributing to the reset-first switching of the Ni1−x O films.",

author = "Kim, {Dae Woo} and Kim, {Tae Ho} and Kim, {Jae Yeon} and Sohn, {Hyun Chul}",

note = "Funding Information: Funding: This work was supported by the Ministry of Trade, Industry and Energy, Korea under the Industrial Strategic Technology Development Program (Grant no. 100680075). Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

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AU - Kim, Tae Ho

AU - Kim, Jae Yeon

AU - Sohn, Hyun Chul

N1 - Funding Information: Funding: This work was supported by the Ministry of Trade, Industry and Energy, Korea under the Industrial Strategic Technology Development Program (Grant no. 100680075). Publisher Copyright: © 2022 by the authors. Licensee MDPI, Basel, Switzerland.

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N2 - Reset-first resistive random access memory (RRAM) devices were demonstrated for offstoichiometric Ni1−x O thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni1−x O based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the Ni1−x O films, and X-ray photoemission spectroscopy showed that the Ni3+ valence state in the Ni1−x O films increased with increasing oxygen partial pressure. Conductive atomic force microscopy showed that the conductivity of the Ni1−x O films increased with increasing oxygen partial pressure during deposition, possibly contributing to the reset-first switching of the Ni1−x O films.

AB - Reset-first resistive random access memory (RRAM) devices were demonstrated for offstoichiometric Ni1−x O thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni1−x O based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the Ni1−x O films, and X-ray photoemission spectroscopy showed that the Ni3+ valence state in the Ni1−x O films increased with increasing oxygen partial pressure. Conductive atomic force microscopy showed that the conductivity of the Ni1−x O films increased with increasing oxygen partial pressure during deposition, possibly contributing to the reset-first switching of the Ni1−x O films.

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