RESET-first unipolar resistance switching behavior in annealed Nb 2 O 5 films

Kyumin Lee, Jonggi Kim, In Su Mok, Heedo Na, Dae Hong Ko, Hyunchul Sohn, Sunghoon Lee, Robert Sinclair

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this work, the effect of thermal annealing on the resistance switching behavior of Nb 2 O 5 films was investigated in conjunction with an analysis of the chemical bonding states and crystal structure. The Nb 2 O 5 films were deposited via reactive sputtering, and annealed via rapid thermal annealing at various temperatures up to 650°C. The crystal structure of the as-deposited Nb 2 O 5 films transformed from amorphous to a hexagonal Nb 2 O 5 crystalline phase with tetragonal NbO 2 following thermal annealing at 500°C. The conductivity of the Nb 2 O 5 films increased drastically as the annealing temperature increased. An increase in the non-lattice oxygen in the Nb 2 O 5 films was also observed with thermal annealing. Pt/Nb 2 O 5 /Pt stacks with the as-deposited Nb 2 O 5 showed typical unipolar resistance switching behaviors after electro-forming; however, the Nb 2 O 5 film devices annealed at 500°C showed RESET-first resistance switching behavior without prior electro-forming. The RESET-first resistance switching in annealed Nb 2 O 5 is believed to be due to the nano-scale conductive path formed in the annealed Nb 2 O 5 films.

Original languageEnglish
Pages (from-to)423-429
Number of pages7
JournalThin Solid Films
Volume558
DOIs
Publication statusPublished - 2014 May 2

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annealing
Annealing
Crystal structure
crystal structure
Rapid thermal annealing
Reactive sputtering
sputtering
Oxygen
Crystalline materials
conductivity
Temperature
temperature
oxygen
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lee, Kyumin ; Kim, Jonggi ; Mok, In Su ; Na, Heedo ; Ko, Dae Hong ; Sohn, Hyunchul ; Lee, Sunghoon ; Sinclair, Robert. / RESET-first unipolar resistance switching behavior in annealed Nb 2 O 5 films In: Thin Solid Films. 2014 ; Vol. 558. pp. 423-429.
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RESET-first unipolar resistance switching behavior in annealed Nb 2 O 5 films . / Lee, Kyumin; Kim, Jonggi; Mok, In Su; Na, Heedo; Ko, Dae Hong; Sohn, Hyunchul; Lee, Sunghoon; Sinclair, Robert.

In: Thin Solid Films, Vol. 558, 02.05.2014, p. 423-429.

Research output: Contribution to journalArticle

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AU - Lee, Kyumin

AU - Kim, Jonggi

AU - Mok, In Su

AU - Na, Heedo

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AU - Lee, Sunghoon

AU - Sinclair, Robert

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