We introduce a method for the direct imprinting of GaAs substrates using wet-chemical stamping. The predefined patterns on the stamps etch the GaAs substrates via metal-assisted chemical etching. This is a resist-free method in which the stamp and the GaAs substrate are directly pressed together. Imprinting and etching occur concurrently until the stamp is released from the substrate. The stamp imprinting results in a three-dimensional anisotropic etching profile and does not impair the semiconductor crystallinity in the wet-chemical bath. Hole, trench, and complex patterns can be imprinted on the GaAs substrate after stamping with pillar, fin, and letter shapes. In addition, we demonstrate the formation of sub-100 nm trench patterns on GaAs through a single-step stamping process. Consecutive imprinting using a single stamp is possible, demonstrating the recyclability of the stamp, which can be used more than 10 times. The greatest benefit of this technique is the simple method of patterning by integrating the lithographic and etching processes, making this a high-throughput and low-cost technique.
Bibliographical noteFunding Information:
This research was supported by the MSIT (Ministry of Science and ICT), Korea, under the “ICT Consilience Creative Program” (IITP-2018-2017-0-01015) supervised by the IITP (Institute for Information & Communications Technology Promotion). This research was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (NRF-2016R1D1A1A09918647).
Copyright © 2019 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)