Resistive switching in TiO 2 thin films using the semiconducting in-Ga-Zn-O electrode

Jun Yeong Seok; Gun Hwan Kim; Jeong Hwan Kim; Un Ki Kim; Yoon Jang Chung; Seul Ji Song; Jung Ho Yoon; Kyung Jin Yoon; Min Hwan Lee; Kyung Min Kim; Cheol Seong Hwang

doi:10.1109/LED.2011.2182175

Resistive switching in TiO ₂ thin films using the semiconducting in-Ga-Zn-O electrode

Jun Yeong Seok, Gun Hwan Kim, Jeong Hwan Kim, Un Ki Kim, Yoon Jang Chung, Seul Ji Song, Jung Ho Yoon, Kyung Jin Yoon, Min Hwan Lee, Kyung Min Kim, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Resistance switching behaviors in a PtIn ₂Ga ₂ZnO ₇(IGZO)TiO ₂Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.

Original language	English
Article number	6151009
Pages (from-to)	582-584
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	4
DOIs	https://doi.org/10.1109/LED.2011.2182175
Publication status	Published - 2012 Apr

Bibliographical note

Funding Information:
Manuscript received November 24, 2011; accepted December 23, 2011. Date of publication February 10, 2012; date of current version March 23, 2012. This work was supported by the National Research Program for the Nano Semiconductor Apparatus Development sponsored by the Korea Ministry of Knowledge and Economy, and the Convergent Research Center program (2011K000610) through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology. The review of this letter was arranged by Editor T. San.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2011.2182175

Cite this

@article{48b2f06618a4450886b4c3ec45ae8c95,

title = "Resistive switching in TiO 2 thin films using the semiconducting in-Ga-Zn-O electrode",

abstract = "Resistance switching behaviors in a PtIn 2Ga 2ZnO 7(IGZO)TiO 2Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.",

author = "Seok, {Jun Yeong} and Kim, {Gun Hwan} and Kim, {Jeong Hwan} and Kim, {Un Ki} and Chung, {Yoon Jang} and Song, {Seul Ji} and Yoon, {Jung Ho} and Yoon, {Kyung Jin} and Lee, {Min Hwan} and Kim, {Kyung Min} and Hwang, {Cheol Seong}",

note = "Funding Information: Manuscript received November 24, 2011; accepted December 23, 2011. Date of publication February 10, 2012; date of current version March 23, 2012. This work was supported by the National Research Program for the Nano Semiconductor Apparatus Development sponsored by the Korea Ministry of Knowledge and Economy, and the Convergent Research Center program (2011K000610) through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology. The review of this letter was arranged by Editor T. San.",

year = "2012",

month = apr,

doi = "10.1109/LED.2011.2182175",

language = "English",

volume = "33",

pages = "582--584",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Resistive switching in TiO 2 thin films using the semiconducting in-Ga-Zn-O electrode

AU - Seok, Jun Yeong

AU - Kim, Gun Hwan

AU - Kim, Jeong Hwan

AU - Kim, Un Ki

AU - Chung, Yoon Jang

AU - Song, Seul Ji

AU - Yoon, Jung Ho

AU - Yoon, Kyung Jin

AU - Lee, Min Hwan

AU - Kim, Kyung Min

AU - Hwang, Cheol Seong

N1 - Funding Information: Manuscript received November 24, 2011; accepted December 23, 2011. Date of publication February 10, 2012; date of current version March 23, 2012. This work was supported by the National Research Program for the Nano Semiconductor Apparatus Development sponsored by the Korea Ministry of Knowledge and Economy, and the Convergent Research Center program (2011K000610) through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology. The review of this letter was arranged by Editor T. San.

PY - 2012/4

Y1 - 2012/4

N2 - Resistance switching behaviors in a PtIn 2Ga 2ZnO 7(IGZO)TiO 2Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.

AB - Resistance switching behaviors in a PtIn 2Ga 2ZnO 7(IGZO)TiO 2Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.

UR - http://www.scopus.com/inward/record.url?scp=84862788677&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862788677&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2182175

DO - 10.1109/LED.2011.2182175

M3 - Article

AN - SCOPUS:84862788677

SN - 0741-3106

VL - 33

SP - 582

EP - 584

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

M1 - 6151009

ER -