Resistance switching behaviors in a PtIn 2Ga 2ZnO 7(IGZO)TiO 2Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - 2012 Apr|
Bibliographical noteFunding Information:
Manuscript received November 24, 2011; accepted December 23, 2011. Date of publication February 10, 2012; date of current version March 23, 2012. This work was supported by the National Research Program for the Nano Semiconductor Apparatus Development sponsored by the Korea Ministry of Knowledge and Economy, and the Convergent Research Center program (2011K000610) through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology. The review of this letter was arranged by Editor T. San.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering