This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices. Controlling oxygen vacancies is required since RRAM uses resistive switching (RS) characteristics by redistributing oxygen ions in oxide, and poor oxygen defect control has been shown to significantly reduce RRAM reliability. Therefore, this study designed an F based RRAM device using fluorine anions rather than oxygen defect for the main agent of RS behavior. We developed the F:TiO2 RRAM material using a novel in situ doping method in ALD and investigated its RS behaviors. The Pt/F:TiO2/Pt device exhibited forming-less bipolar RS and self-rectifying behavior by fluorine anion migration, effectively reducing the sneak current in crossbar array architecture RRAM. The doped fluorine passivated and reduced oxygen related defects in TiO2, confirmed by x-ray photoelectron spectroscopy analysis. Adopting the F-based RS material by ALD provides a viable candidate for high reliability RRAM.
|Publication status||Published - 2022 Mar 1|
Bibliographical noteFunding Information:
This work was supported by the South Korean Ministry of Trade, Industry, and Energy (Grant No. 10068075), the National Research Foundation of Korea funded by the Korean Government (Grant No. 2019R1A2C2087604), and the Creative Materials Discovery Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (Grant No. 2018M3D1A1058536).
© 2022 Author(s).
All Science Journal Classification (ASJC) codes
- Materials Science(all)