This study reports a low-temperature processable, resistive switching (RS) device based on an inorganic–organic hybrid perovskite, i.e., methylammonium lead iodide (CH3NH3PbI3 or MAPbI3) via a fast deposition–crystallization method, as the multifunctional insulator layer to form metal/insulator/metal structure in which Al and p+-Si wafer are used as the top and the bottom metal electrodes, respectively. The MAPbI3-RS device shows acceptable RS characteristics with a switching window of 103 at a low voltage region (≈5 V), a stable endurance during 200 cycles, and a high retention for a prolonged time at 104 s. The operation mechanism of the MAPbI3-RS device is based on ion (simultaneously vacancy) migration, especially iodine ions, which is analogous to that of oxygen ions in the conventional oxide-based RS devices, confirmed through X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy measurements. Furthermore, unusual multiresistance states are achieved from the MAPbI3-RS device under light illumination due to the photosensitivity of MAPbI3.
Bibliographical noteFunding Information:
D.J.K. and Y.J.T. contributed equally to this work. This work was supported by the Industrial Strategic Technology Development Program (10063038, Development of sub-micro in situ patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) and by the Center for Advanced Meta-Materials (NRF-2014M3A6B3063716).
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All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering