Resistivity characteristics of plastic multi-barrier ITO film by the bending process

J. B. Park, J. Y. Hwang, D. S. Seo, S. K. Park, D. G. Moon, J. I. Han

Research output: Contribution to journalArticle

Abstract

We studied transmittance and electrical resistivity characteristics regarding bending of four other multi-barrier Indium tin oxide (ITO) film. Transmission showed there was about large 90% transmission above 550 nm wavelength at three multi-barrier structures. But, both-side hard coated structure showed relatively low 75% transmission above 550 nm wavelength. Also, resistivity change of four other multi-barrier film showed there was the lowest change at one-side hardcoat structure and the resistivity change of the center was larger than that of the edge.

Original languageEnglish
Pages (from-to)155-158
Number of pages4
JournalFerroelectrics
Volume303
DOIs
Publication statusPublished - 2004 Jan 1

Fingerprint

Tin oxides
indium oxides
Indium
tin oxides
Oxide films
oxide films
plastics
Plastics
Wavelength
electrical resistivity
wavelengths
transmittance
indium tin oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Park, J. B. ; Hwang, J. Y. ; Seo, D. S. ; Park, S. K. ; Moon, D. G. ; Han, J. I. / Resistivity characteristics of plastic multi-barrier ITO film by the bending process. In: Ferroelectrics. 2004 ; Vol. 303. pp. 155-158.
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Resistivity characteristics of plastic multi-barrier ITO film by the bending process. / Park, J. B.; Hwang, J. Y.; Seo, D. S.; Park, S. K.; Moon, D. G.; Han, J. I.

In: Ferroelectrics, Vol. 303, 01.01.2004, p. 155-158.

Research output: Contribution to journalArticle

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AU - Han, J. I.

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