Resolving microscopic interfaces in Si1-xGex alloy nanowire devices

Eun Kyoung Jeon, Hyunsang Seo, Chi Won Ahn, Hankyu Seong, Heon Jin Choi, Ju Jin Kim, Ki Jeong Kong, Gyoungho Buh, Hyunju Chang, Jeong O. Lee

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We have fabricated Si1-xGex alloy nanowire devices with Ni and Ni/Au electrodes. The electrical transport characteristics of the alloy nanowires depended strongly on the annealing temperature and contact metals. Ni/Au-contacted devices annealed at 400 °C showed p-type transistor behavior as well as a resistance switching effect, while no switching was observed from Ni-contacted alloy nanowire devices. To identify the origin of such a hysteretic resistance switching effect, we constructed nanowire devices on a 40nm Si3N4 membrane. Transmission electron microscopy analysis combined with electrical transport measurements revealed that devices contacted with Ni/Au, and thereby showing resistance switching, have Au atoms right next to the alloy nanowire.

Original languageEnglish
Article number115708
Issue number11
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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