Resolving microscopic interfaces in Si1-xGex alloy nanowire devices

Eun Kyoung Jeon, Hyunsang Seo, Chi Won Ahn, Hankyu Seong, Heon Jin Choi, Ju Jin Kim, Ki Jeong Kong, Gyoungho Buh, Hyunju Chang, Jeong O. Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have fabricated Si1-xGex alloy nanowire devices with Ni and Ni/Au electrodes. The electrical transport characteristics of the alloy nanowires depended strongly on the annealing temperature and contact metals. Ni/Au-contacted devices annealed at 400 °C showed p-type transistor behavior as well as a resistance switching effect, while no switching was observed from Ni-contacted alloy nanowire devices. To identify the origin of such a hysteretic resistance switching effect, we constructed nanowire devices on a 40nm Si3N4 membrane. Transmission electron microscopy analysis combined with electrical transport measurements revealed that devices contacted with Ni/Au, and thereby showing resistance switching, have Au atoms right next to the alloy nanowire.

Original languageEnglish
Article number115708
JournalNanotechnology
Volume20
Issue number11
DOIs
Publication statusPublished - 2009 May 18

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Nanowires
Transistors
Metals
Annealing
Transmission electron microscopy
Membranes
Atoms
Electrodes
Temperature

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Jeon, E. K., Seo, H., Ahn, C. W., Seong, H., Choi, H. J., Kim, J. J., ... Lee, J. O. (2009). Resolving microscopic interfaces in Si1-xGex alloy nanowire devices. Nanotechnology, 20(11), [115708]. https://doi.org/10.1088/0957-4484/20/11/115708
Jeon, Eun Kyoung ; Seo, Hyunsang ; Ahn, Chi Won ; Seong, Hankyu ; Choi, Heon Jin ; Kim, Ju Jin ; Kong, Ki Jeong ; Buh, Gyoungho ; Chang, Hyunju ; Lee, Jeong O. / Resolving microscopic interfaces in Si1-xGex alloy nanowire devices. In: Nanotechnology. 2009 ; Vol. 20, No. 11.
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Jeon, EK, Seo, H, Ahn, CW, Seong, H, Choi, HJ, Kim, JJ, Kong, KJ, Buh, G, Chang, H & Lee, JO 2009, 'Resolving microscopic interfaces in Si1-xGex alloy nanowire devices', Nanotechnology, vol. 20, no. 11, 115708. https://doi.org/10.1088/0957-4484/20/11/115708

Resolving microscopic interfaces in Si1-xGex alloy nanowire devices. / Jeon, Eun Kyoung; Seo, Hyunsang; Ahn, Chi Won; Seong, Hankyu; Choi, Heon Jin; Kim, Ju Jin; Kong, Ki Jeong; Buh, Gyoungho; Chang, Hyunju; Lee, Jeong O.

In: Nanotechnology, Vol. 20, No. 11, 115708, 18.05.2009.

Research output: Contribution to journalArticle

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AU - Jeon, Eun Kyoung

AU - Seo, Hyunsang

AU - Ahn, Chi Won

AU - Seong, Hankyu

AU - Choi, Heon Jin

AU - Kim, Ju Jin

AU - Kong, Ki Jeong

AU - Buh, Gyoungho

AU - Chang, Hyunju

AU - Lee, Jeong O.

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AB - We have fabricated Si1-xGex alloy nanowire devices with Ni and Ni/Au electrodes. The electrical transport characteristics of the alloy nanowires depended strongly on the annealing temperature and contact metals. Ni/Au-contacted devices annealed at 400 °C showed p-type transistor behavior as well as a resistance switching effect, while no switching was observed from Ni-contacted alloy nanowire devices. To identify the origin of such a hysteretic resistance switching effect, we constructed nanowire devices on a 40nm Si3N4 membrane. Transmission electron microscopy analysis combined with electrical transport measurements revealed that devices contacted with Ni/Au, and thereby showing resistance switching, have Au atoms right next to the alloy nanowire.

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