Resolving microscopic interfaces in Si1-xGex alloy nanowire devices

Eun Kyoung Jeon; Hyunsang Seo; Chi Won Ahn; Hankyu Seong; Heon Jin Choi; Ju Jin Kim; Ki Jeong Kong; Gyoungho Buh; Hyunju Chang; Jeong O. Lee

doi:10.1088/0957-4484/20/11/115708

Resolving microscopic interfaces in Si_1-xGe_x alloy nanowire devices

Eun Kyoung Jeon, Hyunsang Seo, Chi Won Ahn, Hankyu Seong, Heon Jin Choi, Ju Jin Kim, Ki Jeong Kong, Gyoungho Buh, Hyunju Chang, Jeong O. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have fabricated Si_1-xGe_x alloy nanowire devices with Ni and Ni/Au electrodes. The electrical transport characteristics of the alloy nanowires depended strongly on the annealing temperature and contact metals. Ni/Au-contacted devices annealed at 400 °C showed p-type transistor behavior as well as a resistance switching effect, while no switching was observed from Ni-contacted alloy nanowire devices. To identify the origin of such a hysteretic resistance switching effect, we constructed nanowire devices on a 40nm Si₃N₄ membrane. Transmission electron microscopy analysis combined with electrical transport measurements revealed that devices contacted with Ni/Au, and thereby showing resistance switching, have Au atoms right next to the alloy nanowire.

Original language	English
Article number	115708
Journal	Nanotechnology
Volume	20
Issue number	11
DOIs	https://doi.org/10.1088/0957-4484/20/11/115708
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/20/11/115708

Cite this

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title = "Resolving microscopic interfaces in Si1-xGex alloy nanowire devices",

abstract = "We have fabricated Si1-xGex alloy nanowire devices with Ni and Ni/Au electrodes. The electrical transport characteristics of the alloy nanowires depended strongly on the annealing temperature and contact metals. Ni/Au-contacted devices annealed at 400 °C showed p-type transistor behavior as well as a resistance switching effect, while no switching was observed from Ni-contacted alloy nanowire devices. To identify the origin of such a hysteretic resistance switching effect, we constructed nanowire devices on a 40nm Si3N4 membrane. Transmission electron microscopy analysis combined with electrical transport measurements revealed that devices contacted with Ni/Au, and thereby showing resistance switching, have Au atoms right next to the alloy nanowire.",

author = "Jeon, {Eun Kyoung} and Hyunsang Seo and Ahn, {Chi Won} and Hankyu Seong and Choi, {Heon Jin} and Kim, {Ju Jin} and Kong, {Ki Jeong} and Gyoungho Buh and Hyunju Chang and Lee, {Jeong O.}",

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T1 - Resolving microscopic interfaces in Si1-xGex alloy nanowire devices

AU - Jeon, Eun Kyoung

AU - Seo, Hyunsang

AU - Ahn, Chi Won

AU - Seong, Hankyu

AU - Choi, Heon Jin

AU - Kim, Ju Jin

AU - Kong, Ki Jeong

AU - Buh, Gyoungho

AU - Chang, Hyunju

AU - Lee, Jeong O.

PY - 2009

Y1 - 2009

N2 - We have fabricated Si1-xGex alloy nanowire devices with Ni and Ni/Au electrodes. The electrical transport characteristics of the alloy nanowires depended strongly on the annealing temperature and contact metals. Ni/Au-contacted devices annealed at 400 °C showed p-type transistor behavior as well as a resistance switching effect, while no switching was observed from Ni-contacted alloy nanowire devices. To identify the origin of such a hysteretic resistance switching effect, we constructed nanowire devices on a 40nm Si3N4 membrane. Transmission electron microscopy analysis combined with electrical transport measurements revealed that devices contacted with Ni/Au, and thereby showing resistance switching, have Au atoms right next to the alloy nanowire.

AB - We have fabricated Si1-xGex alloy nanowire devices with Ni and Ni/Au electrodes. The electrical transport characteristics of the alloy nanowires depended strongly on the annealing temperature and contact metals. Ni/Au-contacted devices annealed at 400 °C showed p-type transistor behavior as well as a resistance switching effect, while no switching was observed from Ni-contacted alloy nanowire devices. To identify the origin of such a hysteretic resistance switching effect, we constructed nanowire devices on a 40nm Si3N4 membrane. Transmission electron microscopy analysis combined with electrical transport measurements revealed that devices contacted with Ni/Au, and thereby showing resistance switching, have Au atoms right next to the alloy nanowire.

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Resolving microscopic interfaces in Si_1-xGe_x alloy nanowire devices

Abstract

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