Resolving microscopic interfaces in Si1-xGex alloy nanowire devices

Eun Kyoung Jeon, Hyunsang Seo, Chi Won Ahn, Hankyu Seong, Heon-Jin Choi, Ju Jin Kim, Ki Jeong Kong, Gyoungho Buh, Hyunju Chang, Jeong O. Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have fabricated Si1-xGex alloy nanowire devices with Ni and Ni/Au electrodes. The electrical transport characteristics of the alloy nanowires depended strongly on the annealing temperature and contact metals. Ni/Au-contacted devices annealed at 400 °C showed p-type transistor behavior as well as a resistance switching effect, while no switching was observed from Ni-contacted alloy nanowire devices. To identify the origin of such a hysteretic resistance switching effect, we constructed nanowire devices on a 40nm Si3N4 membrane. Transmission electron microscopy analysis combined with electrical transport measurements revealed that devices contacted with Ni/Au, and thereby showing resistance switching, have Au atoms right next to the alloy nanowire.

Original languageEnglish
Article number115708
JournalNanotechnology
Volume20
Issue number11
DOIs
Publication statusPublished - 2009 May 18

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Nanowires
Transistors
Metals
Annealing
Transmission electron microscopy
Membranes
Atoms
Electrodes
Temperature

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Jeon, E. K., Seo, H., Ahn, C. W., Seong, H., Choi, H-J., Kim, J. J., ... Lee, J. O. (2009). Resolving microscopic interfaces in Si1-xGex alloy nanowire devices. Nanotechnology, 20(11), [115708]. https://doi.org/10.1088/0957-4484/20/11/115708
Jeon, Eun Kyoung ; Seo, Hyunsang ; Ahn, Chi Won ; Seong, Hankyu ; Choi, Heon-Jin ; Kim, Ju Jin ; Kong, Ki Jeong ; Buh, Gyoungho ; Chang, Hyunju ; Lee, Jeong O. / Resolving microscopic interfaces in Si1-xGex alloy nanowire devices. In: Nanotechnology. 2009 ; Vol. 20, No. 11.
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Jeon, EK, Seo, H, Ahn, CW, Seong, H, Choi, H-J, Kim, JJ, Kong, KJ, Buh, G, Chang, H & Lee, JO 2009, 'Resolving microscopic interfaces in Si1-xGex alloy nanowire devices', Nanotechnology, vol. 20, no. 11, 115708. https://doi.org/10.1088/0957-4484/20/11/115708

Resolving microscopic interfaces in Si1-xGex alloy nanowire devices. / Jeon, Eun Kyoung; Seo, Hyunsang; Ahn, Chi Won; Seong, Hankyu; Choi, Heon-Jin; Kim, Ju Jin; Kong, Ki Jeong; Buh, Gyoungho; Chang, Hyunju; Lee, Jeong O.

In: Nanotechnology, Vol. 20, No. 11, 115708, 18.05.2009.

Research output: Contribution to journalArticle

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AU - Jeon, Eun Kyoung

AU - Seo, Hyunsang

AU - Ahn, Chi Won

AU - Seong, Hankyu

AU - Choi, Heon-Jin

AU - Kim, Ju Jin

AU - Kong, Ki Jeong

AU - Buh, Gyoungho

AU - Chang, Hyunju

AU - Lee, Jeong O.

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AB - We have fabricated Si1-xGex alloy nanowire devices with Ni and Ni/Au electrodes. The electrical transport characteristics of the alloy nanowires depended strongly on the annealing temperature and contact metals. Ni/Au-contacted devices annealed at 400 °C showed p-type transistor behavior as well as a resistance switching effect, while no switching was observed from Ni-contacted alloy nanowire devices. To identify the origin of such a hysteretic resistance switching effect, we constructed nanowire devices on a 40nm Si3N4 membrane. Transmission electron microscopy analysis combined with electrical transport measurements revealed that devices contacted with Ni/Au, and thereby showing resistance switching, have Au atoms right next to the alloy nanowire.

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