Resonant Raman scattering of ZnSxSe1-x solid solutions: The role of S and Se electronic states

M. Dimitrievska, H. Xie, A. J. Jackson, X. Fontané, M. Espíndola-Rodríguez, E. Saucedo, A. Pérez-Rodríguez, A. Walsh, V. Izquierdo-Roca

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A comprehensive Raman resonance scattering study of ZnSxSe1-x (ZnSSe) solid solutions over the whole compositional range (0 ≤ x ≤ 1) has been carried out using 325 and 455 nm excitation wavelengths. The Raman scattering intensities of LO ZnS-like and ZnSe-like phonon modes, corresponding to pure S and Se vibrations, respectively, are revealed to be significantly enhanced when excited with 325 nm excitation in the case of S vibrations, and with 455 nm in the case of Se vibrations. This behavior is explained by the interaction of the excitation photons with the corresponding S or Se electronic states in the conduction band, and further confirmed by first principles simulations. These findings advance the fundamental understanding of the coupling between the electronic transitions and photons in the case of Raman resonance effects, and provide inputs for further studies of lattice dynamics, especially in the case of chalcogenide materials. Additionally, the coexistence of modes corresponding to only S vibrations and only Se vibrations in the ZnSSe alloys makes these results applicable for the compositional assessment of ZnSSe compounds.

Original languageEnglish
Pages (from-to)7632-7640
Number of pages9
JournalPhysical Chemistry Chemical Physics
Volume18
Issue number11
DOIs
Publication statusPublished - 2016 Jan 1

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Electronic states
Raman scattering
Solid solutions
solid solutions
Photons
Raman spectra
vibration
Lattice vibrations
Conduction bands
electronics
Scattering
Wavelength
excitation
resonance scattering
photons
conduction bands
wavelengths
simulation
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Dimitrievska, M., Xie, H., Jackson, A. J., Fontané, X., Espíndola-Rodríguez, M., Saucedo, E., ... Izquierdo-Roca, V. (2016). Resonant Raman scattering of ZnSxSe1-x solid solutions: The role of S and Se electronic states. Physical Chemistry Chemical Physics, 18(11), 7632-7640. https://doi.org/10.1039/c5cp04498g
Dimitrievska, M. ; Xie, H. ; Jackson, A. J. ; Fontané, X. ; Espíndola-Rodríguez, M. ; Saucedo, E. ; Pérez-Rodríguez, A. ; Walsh, A. ; Izquierdo-Roca, V. / Resonant Raman scattering of ZnSxSe1-x solid solutions : The role of S and Se electronic states. In: Physical Chemistry Chemical Physics. 2016 ; Vol. 18, No. 11. pp. 7632-7640.
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Dimitrievska, M, Xie, H, Jackson, AJ, Fontané, X, Espíndola-Rodríguez, M, Saucedo, E, Pérez-Rodríguez, A, Walsh, A & Izquierdo-Roca, V 2016, 'Resonant Raman scattering of ZnSxSe1-x solid solutions: The role of S and Se electronic states', Physical Chemistry Chemical Physics, vol. 18, no. 11, pp. 7632-7640. https://doi.org/10.1039/c5cp04498g

Resonant Raman scattering of ZnSxSe1-x solid solutions : The role of S and Se electronic states. / Dimitrievska, M.; Xie, H.; Jackson, A. J.; Fontané, X.; Espíndola-Rodríguez, M.; Saucedo, E.; Pérez-Rodríguez, A.; Walsh, A.; Izquierdo-Roca, V.

In: Physical Chemistry Chemical Physics, Vol. 18, No. 11, 01.01.2016, p. 7632-7640.

Research output: Contribution to journalArticle

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AU - Dimitrievska, M.

AU - Xie, H.

AU - Jackson, A. J.

AU - Fontané, X.

AU - Espíndola-Rodríguez, M.

AU - Saucedo, E.

AU - Pérez-Rodríguez, A.

AU - Walsh, A.

AU - Izquierdo-Roca, V.

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N2 - A comprehensive Raman resonance scattering study of ZnSxSe1-x (ZnSSe) solid solutions over the whole compositional range (0 ≤ x ≤ 1) has been carried out using 325 and 455 nm excitation wavelengths. The Raman scattering intensities of LO ZnS-like and ZnSe-like phonon modes, corresponding to pure S and Se vibrations, respectively, are revealed to be significantly enhanced when excited with 325 nm excitation in the case of S vibrations, and with 455 nm in the case of Se vibrations. This behavior is explained by the interaction of the excitation photons with the corresponding S or Se electronic states in the conduction band, and further confirmed by first principles simulations. These findings advance the fundamental understanding of the coupling between the electronic transitions and photons in the case of Raman resonance effects, and provide inputs for further studies of lattice dynamics, especially in the case of chalcogenide materials. Additionally, the coexistence of modes corresponding to only S vibrations and only Se vibrations in the ZnSSe alloys makes these results applicable for the compositional assessment of ZnSSe compounds.

AB - A comprehensive Raman resonance scattering study of ZnSxSe1-x (ZnSSe) solid solutions over the whole compositional range (0 ≤ x ≤ 1) has been carried out using 325 and 455 nm excitation wavelengths. The Raman scattering intensities of LO ZnS-like and ZnSe-like phonon modes, corresponding to pure S and Se vibrations, respectively, are revealed to be significantly enhanced when excited with 325 nm excitation in the case of S vibrations, and with 455 nm in the case of Se vibrations. This behavior is explained by the interaction of the excitation photons with the corresponding S or Se electronic states in the conduction band, and further confirmed by first principles simulations. These findings advance the fundamental understanding of the coupling between the electronic transitions and photons in the case of Raman resonance effects, and provide inputs for further studies of lattice dynamics, especially in the case of chalcogenide materials. Additionally, the coexistence of modes corresponding to only S vibrations and only Se vibrations in the ZnSSe alloys makes these results applicable for the compositional assessment of ZnSSe compounds.

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Dimitrievska M, Xie H, Jackson AJ, Fontané X, Espíndola-Rodríguez M, Saucedo E et al. Resonant Raman scattering of ZnSxSe1-x solid solutions: The role of S and Se electronic states. Physical Chemistry Chemical Physics. 2016 Jan 1;18(11):7632-7640. https://doi.org/10.1039/c5cp04498g