Response to "comment on Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment'" [Appl. Phys. Lett. 98, 176101 (2011)]

Jin Woo Park, Hong Koo Baik, Taekyung Lim, Sanghyun Ju

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number176102
JournalApplied Physics Letters
Volume98
Issue number17
DOIs
Publication statusPublished - 2011 Apr 25

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nitrogen plasma
threshold voltage
nanowires
transistors
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{0a7af564a33d4f3b90336e1b198b89d9,
title = "Response to {"}comment on Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment'{"} [Appl. Phys. Lett. 98, 176101 (2011)]",
author = "Park, {Jin Woo} and Baik, {Hong Koo} and Taekyung Lim and Sanghyun Ju",
year = "2011",
month = "4",
day = "25",
doi = "10.1063/1.3584002",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Response to "comment on Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment'" [Appl. Phys. Lett. 98, 176101 (2011)]

AU - Park, Jin Woo

AU - Baik, Hong Koo

AU - Lim, Taekyung

AU - Ju, Sanghyun

PY - 2011/4/25

Y1 - 2011/4/25

UR - http://www.scopus.com/inward/record.url?scp=79955686418&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955686418&partnerID=8YFLogxK

U2 - 10.1063/1.3584002

DO - 10.1063/1.3584002

M3 - Comment/debate

AN - SCOPUS:79955686418

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 176102

ER -