Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation

Sang Han Park, Jimin Chae, Kwang Sik Jeong, Tae Hyeon Kim, Hyejin Choi, Mann Ho Cho, Inwoong Hwang, Myung Ho Bae, Chul Kang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.

Original languageEnglish
Pages (from-to)3820-3826
Number of pages7
JournalNano letters
Volume15
Issue number6
DOIs
Publication statusPublished - 2015 Jun 10

Fingerprint

Surface states
Fermi level
Tuning
tuning
insulators
control equipment
Tensile strain
Magnetoresistance
X ray scattering
Density functional theory
Carrier concentration
transmittance
Physical properties
physical properties
time measurement
Spectroscopy
density functional theory
scattering
spectroscopy
x rays

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Park, Sang Han ; Chae, Jimin ; Jeong, Kwang Sik ; Kim, Tae Hyeon ; Choi, Hyejin ; Cho, Mann Ho ; Hwang, Inwoong ; Bae, Myung Ho ; Kang, Chul. / Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation. In: Nano letters. 2015 ; Vol. 15, No. 6. pp. 3820-3826.
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Park, SH, Chae, J, Jeong, KS, Kim, TH, Choi, H, Cho, MH, Hwang, I, Bae, MH & Kang, C 2015, 'Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation', Nano letters, vol. 15, no. 6, pp. 3820-3826. https://doi.org/10.1021/acs.nanolett.5b00553

Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation. / Park, Sang Han; Chae, Jimin; Jeong, Kwang Sik; Kim, Tae Hyeon; Choi, Hyejin; Cho, Mann Ho; Hwang, Inwoong; Bae, Myung Ho; Kang, Chul.

In: Nano letters, Vol. 15, No. 6, 10.06.2015, p. 3820-3826.

Research output: Contribution to journalArticle

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AU - Choi, Hyejin

AU - Cho, Mann Ho

AU - Hwang, Inwoong

AU - Bae, Myung Ho

AU - Kang, Chul

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AB - For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.

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