Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation

Sang Han Park, Jimin Chae, Kwang Sik Jeong, Tae Hyeon Kim, Hyejin Choi, Mann Ho Cho, Inwoong Hwang, Myung Ho Bae, Chul Kang

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.

Original languageEnglish
Pages (from-to)3820-3826
Number of pages7
JournalNano letters
Volume15
Issue number6
DOIs
Publication statusPublished - 2015 Jun 10

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Park, S. H., Chae, J., Jeong, K. S., Kim, T. H., Choi, H., Cho, M. H., Hwang, I., Bae, M. H., & Kang, C. (2015). Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation. Nano letters, 15(6), 3820-3826. https://doi.org/10.1021/acs.nanolett.5b00553