Reversible resistive switching behaviors in NiO nanowires

Sung In Kim; Jae Hak Lee; Young Wook Chang; Sung Sic Hwang; Kyung Hwa Yoo

doi:10.1063/1.2958234

Reversible resistive switching behaviors in NiO nanowires

Sung In Kim, Jae Hak Lee, Young Wook Chang, Sung Sic Hwang, Kyung Hwa Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

93 Citations (Scopus)

Abstract

We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes. We show that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. Thus, a 1-μm -long NiO nanowire device operates under 2.5 V and even a 25-μm -long NiO nanowire array operates under 20 V. These results suggest the possibility of developing nanowire-based resistance memory devices.

Original language	English
Article number	033503
Journal	Applied Physics Letters
Volume	93
Issue number	3
DOIs	https://doi.org/10.1063/1.2958234
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was financially supported by Korea Science and Engineering Foundation through National Core Research Center for Nanomedical Technology (Grant No. R15-20040924-00000-0) and BK21 Project.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2958234

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title = "Reversible resistive switching behaviors in NiO nanowires",

abstract = "We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes. We show that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. Thus, a 1-μm -long NiO nanowire device operates under 2.5 V and even a 25-μm -long NiO nanowire array operates under 20 V. These results suggest the possibility of developing nanowire-based resistance memory devices.",

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AU - Kim, Sung In

AU - Lee, Jae Hak

AU - Chang, Young Wook

AU - Hwang, Sung Sic

AU - Yoo, Kyung Hwa

N1 - Funding Information: This work was financially supported by Korea Science and Engineering Foundation through National Core Research Center for Nanomedical Technology (Grant No. R15-20040924-00000-0) and BK21 Project.

PY - 2008

Y1 - 2008

N2 - We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes. We show that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. Thus, a 1-μm -long NiO nanowire device operates under 2.5 V and even a 25-μm -long NiO nanowire array operates under 20 V. These results suggest the possibility of developing nanowire-based resistance memory devices.

AB - We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes. We show that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. Thus, a 1-μm -long NiO nanowire device operates under 2.5 V and even a 25-μm -long NiO nanowire array operates under 20 V. These results suggest the possibility of developing nanowire-based resistance memory devices.

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Reversible resistive switching behaviors in NiO nanowires

Abstract

Bibliographical note

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