Reversible resistive switching behaviors in NiO nanowires

Sung In Kim, Jae Hak Lee, Young Wook Chang, Sung Sic Hwang, Kyung Hwa Yoo

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93 Citations (Scopus)


We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes. We show that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. Thus, a 1-μm -long NiO nanowire device operates under 2.5 V and even a 25-μm -long NiO nanowire array operates under 20 V. These results suggest the possibility of developing nanowire-based resistance memory devices.

Original languageEnglish
Article number033503
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work was financially supported by Korea Science and Engineering Foundation through National Core Research Center for Nanomedical Technology (Grant No. R15-20040924-00000-0) and BK21 Project.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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