We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes. We show that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. Thus, a 1-μm -long NiO nanowire device operates under 2.5 V and even a 25-μm -long NiO nanowire array operates under 20 V. These results suggest the possibility of developing nanowire-based resistance memory devices.
Bibliographical noteFunding Information:
This work was financially supported by Korea Science and Engineering Foundation through National Core Research Center for Nanomedical Technology (Grant No. R15-20040924-00000-0) and BK21 Project.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)