Abstract
We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.
| Original language | English |
|---|---|
| Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
| Pages | 1126-1127 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2010 May 5 |
| Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8 |
Publication series
| Name | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
|---|
Other
| Other | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
|---|---|
| Country | China |
| City | Hongkong |
| Period | 10/1/3 → 10/1/8 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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Reversible resistive switching behaviors in NiO nanowires. / Kim, Sung In; Lee, Jae Hak; Chang, Young Wook; Yoo, Kyung Hwa.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1126-1127 5424992 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Reversible resistive switching behaviors in NiO nanowires
AU - Kim, Sung In
AU - Lee, Jae Hak
AU - Chang, Young Wook
AU - Yoo, Kyung Hwa
PY - 2010/5/5
Y1 - 2010/5/5
N2 - We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.
AB - We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.
UR - http://www.scopus.com/inward/record.url?scp=77951653246&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951653246&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424992
DO - 10.1109/INEC.2010.5424992
M3 - Conference contribution
AN - SCOPUS:77951653246
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1126
EP - 1127
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
ER -