Reversible resistive switching behaviors in NiO nanowires

Sung In Kim, Jae Hak Lee, Young Wook Chang, Kyung-hwa Yoo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1126-1127
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Nanowires
Electroforming
Thin films
Electric fields
Membranes
Aluminum
Data storage equipment
Oxides

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, S. I., Lee, J. H., Chang, Y. W., & Yoo, K. (2010). Reversible resistive switching behaviors in NiO nanowires. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1126-1127). [5424992] https://doi.org/10.1109/INEC.2010.5424992
Kim, Sung In ; Lee, Jae Hak ; Chang, Young Wook ; Yoo, Kyung-hwa. / Reversible resistive switching behaviors in NiO nanowires. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1126-1127
@inproceedings{d4a1ff9817a241b6b350139c8dc7c043,
title = "Reversible resistive switching behaviors in NiO nanowires",
abstract = "We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.",
author = "Kim, {Sung In} and Lee, {Jae Hak} and Chang, {Young Wook} and Kyung-hwa Yoo",
year = "2010",
month = "5",
day = "5",
doi = "10.1109/INEC.2010.5424992",
language = "English",
isbn = "9781424435449",
pages = "1126--1127",
booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

}

Kim, SI, Lee, JH, Chang, YW & Yoo, K 2010, Reversible resistive switching behaviors in NiO nanowires. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424992, pp. 1126-1127, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424992

Reversible resistive switching behaviors in NiO nanowires. / Kim, Sung In; Lee, Jae Hak; Chang, Young Wook; Yoo, Kyung-hwa.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1126-1127 5424992.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Reversible resistive switching behaviors in NiO nanowires

AU - Kim, Sung In

AU - Lee, Jae Hak

AU - Chang, Young Wook

AU - Yoo, Kyung-hwa

PY - 2010/5/5

Y1 - 2010/5/5

N2 - We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.

AB - We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.

UR - http://www.scopus.com/inward/record.url?scp=77951653246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951653246&partnerID=8YFLogxK

U2 - 10.1109/INEC.2010.5424992

DO - 10.1109/INEC.2010.5424992

M3 - Conference contribution

AN - SCOPUS:77951653246

SN - 9781424435449

SP - 1126

EP - 1127

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

ER -

Kim SI, Lee JH, Chang YW, Yoo K. Reversible resistive switching behaviors in NiO nanowires. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1126-1127. 5424992 https://doi.org/10.1109/INEC.2010.5424992