TY - GEN
T1 - Reversible resistive switching behaviors in NiO nanowires
AU - Kim, Sung In
AU - Lee, Jae Hak
AU - Chang, Young Wook
AU - Yoo, Kyung Hwa
PY - 2010
Y1 - 2010
N2 - We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.
AB - We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.
UR - http://www.scopus.com/inward/record.url?scp=77951653246&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951653246&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424992
DO - 10.1109/INEC.2010.5424992
M3 - Conference contribution
AN - SCOPUS:77951653246
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1126
EP - 1127
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -