Reversible resistive switching behaviors in NiO nanowires

Sung In Kim; Jae Hak Lee; Young Wook Chang; Kyung Hwa Yoo

doi:10.1109/INEC.2010.5424992

Reversible resistive switching behaviors in NiO nanowires

Sung In Kim, Jae Hak Lee, Young Wook Chang, Kyung Hwa Yoo

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1126-1127
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424992
Publication status	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country	China
City	Hongkong
Period	10/1/3 → 10/1/8

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424992

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@inproceedings{d4a1ff9817a241b6b350139c8dc7c043,

title = "Reversible resistive switching behaviors in NiO nanowires",

abstract = "We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.",

author = "Kim, {Sung In} and Lee, {Jae Hak} and Chang, {Young Wook} and Yoo, {Kyung Hwa}",

year = "2010",

doi = "10.1109/INEC.2010.5424992",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "1126--1127",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

}

Kim, SI, Lee, JH, Chang, YW & Yoo, KH 2010, Reversible resistive switching behaviors in NiO nanowires. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424992, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1126-1127, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424992

Reversible resistive switching behaviors in NiO nanowires. / Kim, Sung In; Lee, Jae Hak; Chang, Young Wook; Yoo, Kyung Hwa.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1126-1127 5424992 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Reversible resistive switching behaviors in NiO nanowires

AU - Kim, Sung In

AU - Lee, Jae Hak

AU - Chang, Young Wook

AU - Yoo, Kyung Hwa

PY - 2010

Y1 - 2010

N2 - We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.

AB - We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.

UR - http://www.scopus.com/inward/record.url?scp=77951653246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951653246&partnerID=8YFLogxK

U2 - 10.1109/INEC.2010.5424992

DO - 10.1109/INEC.2010.5424992

M3 - Conference contribution

AN - SCOPUS:77951653246

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 1126

EP - 1127

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -