Reversible resistive switching behaviors in NiO nanowires

Sung In Kim, Jae Hak Lee, Young Wook Chang, Kyung Hwa Yoo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes and shown that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. These results suggest the possibility of developing nanowire-based resistance memory devices.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1126-1127
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Kim, S. I., Lee, J. H., Chang, Y. W., & Yoo, K. H. (2010). Reversible resistive switching behaviors in NiO nanowires. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1126-1127). [5424992] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424992