Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

Hyungjun Kim, Il Kwon Oh

Research output: Contribution to journalReview articlepeer-review

53 Citations (Scopus)

Abstract

With devices being scaled down to the nanometer regime, the need for atomic thickness control with high conformality is increasing. Atomic layer deposition (ALD) is a key technology enabler of nanoscale memory and logic devices owing to its excellent conformality and thickness controllability. Plasma-enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties than in conventional thermal ALD. These benefits make PE-ALD more attractive for nanoscale device fabrication. In this paper, the basic characteristics and film properties of PE-ALD processes will be reviewed, focusing on the application of PE-ALD in key components of nanoscale device fabrication: gate oxides, Cu interconnects, and nanoscale contacts.

Original languageEnglish
Article number03DA01
JournalJapanese journal of applied physics
Volume53
Issue number3 SPEC. ISSUE 2
DOIs
Publication statusPublished - 2014 Mar

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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