Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

Hyungjun Kim, Il Kwon Oh

Research output: Contribution to journalReview article

33 Citations (Scopus)

Abstract

With devices being scaled down to the nanometer regime, the need for atomic thickness control with high conformality is increasing. Atomic layer deposition (ALD) is a key technology enabler of nanoscale memory and logic devices owing to its excellent conformality and thickness controllability. Plasma-enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties than in conventional thermal ALD. These benefits make PE-ALD more attractive for nanoscale device fabrication. In this paper, the basic characteristics and film properties of PE-ALD processes will be reviewed, focusing on the application of PE-ALD in key components of nanoscale device fabrication: gate oxides, Cu interconnects, and nanoscale contacts.

Original languageEnglish
Article number03DA01
JournalJapanese Journal of Applied Physics
Volume53
Issue number3 SPEC. ISSUE 2
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Plasmas
Fabrication
fabrication
Thickness control
Logic devices
controllability
Controllability
logic
Data storage equipment
Oxides
oxides
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "With devices being scaled down to the nanometer regime, the need for atomic thickness control with high conformality is increasing. Atomic layer deposition (ALD) is a key technology enabler of nanoscale memory and logic devices owing to its excellent conformality and thickness controllability. Plasma-enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties than in conventional thermal ALD. These benefits make PE-ALD more attractive for nanoscale device fabrication. In this paper, the basic characteristics and film properties of PE-ALD processes will be reviewed, focusing on the application of PE-ALD in key components of nanoscale device fabrication: gate oxides, Cu interconnects, and nanoscale contacts.",
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Review of plasma-enhanced atomic layer deposition : Technical enabler of nanoscale device fabrication. / Kim, Hyungjun; Oh, Il Kwon.

In: Japanese Journal of Applied Physics, Vol. 53, No. 3 SPEC. ISSUE 2, 03DA01, 01.01.2014.

Research output: Contribution to journalReview article

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