Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

Hyungjun Kim, Il Kwon Oh

Research output: Contribution to journalReview article

46 Citations (Scopus)

Abstract

With devices being scaled down to the nanometer regime, the need for atomic thickness control with high conformality is increasing. Atomic layer deposition (ALD) is a key technology enabler of nanoscale memory and logic devices owing to its excellent conformality and thickness controllability. Plasma-enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties than in conventional thermal ALD. These benefits make PE-ALD more attractive for nanoscale device fabrication. In this paper, the basic characteristics and film properties of PE-ALD processes will be reviewed, focusing on the application of PE-ALD in key components of nanoscale device fabrication: gate oxides, Cu interconnects, and nanoscale contacts.

Original languageEnglish
Article number03DA01
JournalJapanese journal of applied physics
Volume53
Issue number3 SPEC. ISSUE 2
DOIs
Publication statusPublished - 2014 Mar

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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