Oxide semiconductors became one of the potential elements for large area electronics such as a channel for thin film transistors. Optical and electrical properties were modified by alloying or doping of several oxide materials; In2O3, ZnO, Ga2O3, and SnO 2. The excellent properties achieved at the ternary or quaternary alloys could be explained by the role of each materials as a carrier controller, a conduction path, and etc. The metal oxide semiconductors were generally deposited by vacuum process but recently, alternative ways, like a sol-gel or an ink-jet printing, are suggested. In this review, diverse approaches on oxide semiconductors are shown, and an in-depth discussion of the optical and electrical properties alternation in metal oxide alloy fabricated by various methods is given.