Review paper: Transparent amorphous oxide semiconductor thin film transistor

Jang Yeon Kwon, Do Joong Lee, Ki Bum Kim

Research output: Contribution to journalReview article

191 Citations (Scopus)

Abstract

Thin film transistors (TFTs) with oxide semiconductors have drawn great attention in the last few years, especially for large area electronic applications, such as high resolution active matrix liquid crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs), because of their high electron mobility and spatial uniform property. This paper reviews and summarizes recent emerging reports that include potential applications, oxide semiconductor materials, and the impact of the fabrication process on electrical performance. We also address the stability behavior of such devices under bias/illumination stress and critical factors related to reliability, such as the gate insulator, the ambient and the device structure.

Original languageEnglish
Pages (from-to)1-11
Number of pages11
JournalElectronic Materials Letters
Volume7
Issue number1
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Amorphous semiconductors
Thin film transistors
Electron mobility
Organic light emitting diodes (OLED)
Liquid crystal displays
Lighting
Semiconductor materials
Fabrication
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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Review paper : Transparent amorphous oxide semiconductor thin film transistor. / Kwon, Jang Yeon; Lee, Do Joong; Kim, Ki Bum.

In: Electronic Materials Letters, Vol. 7, No. 1, 01.03.2011, p. 1-11.

Research output: Contribution to journalReview article

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