Abstract
Hole injection enhancement has been reported for organic thin-film transistors and light-emitting diodes at the indium tin oxide (ITO) anode side by introducing a LiF layer, which is usually used as an electron injection layer at the cathode side to reduce the electron injection barrier. We report a revised mechanism for the hole injection enhancement by studying a prototype interface of pentacene/LiF/ITO anode. Upon deposition of LiF on ITO, the work function of ITO decreases, and energy level realignment occurs between the pentacene and ITO. The hole injection barrier from the ITO to the pentacene highest occupied molecular orbital increases significantly with LiF insertion. Thus, the reduction in the hole injection barrier is not a critical factor for the hole injection enhancement. We suggest that a LiF insulating buffer layer enhances both injection barriers and tunneling through the barrier when a bias is applied.
| Original language | English |
|---|---|
| Article number | 053701 |
| Journal | Journal of Applied Physics |
| Volume | 108 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2010 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Revised hole injection mechanism of a thin LiF layer introduced between pentacene and an indium tin oxide anode. / Kim, Hyun Sung; Lee, Hyunbok; Jeon, Pyung Eun; Jeong, Kwangho; Lee, Jung Han; Yi, Yeonjin.
In: Journal of Applied Physics, Vol. 108, No. 5, 053701, 01.09.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - Revised hole injection mechanism of a thin LiF layer introduced between pentacene and an indium tin oxide anode
AU - Kim, Hyun Sung
AU - Lee, Hyunbok
AU - Jeon, Pyung Eun
AU - Jeong, Kwangho
AU - Lee, Jung Han
AU - Yi, Yeonjin
PY - 2010/9/1
Y1 - 2010/9/1
N2 - Hole injection enhancement has been reported for organic thin-film transistors and light-emitting diodes at the indium tin oxide (ITO) anode side by introducing a LiF layer, which is usually used as an electron injection layer at the cathode side to reduce the electron injection barrier. We report a revised mechanism for the hole injection enhancement by studying a prototype interface of pentacene/LiF/ITO anode. Upon deposition of LiF on ITO, the work function of ITO decreases, and energy level realignment occurs between the pentacene and ITO. The hole injection barrier from the ITO to the pentacene highest occupied molecular orbital increases significantly with LiF insertion. Thus, the reduction in the hole injection barrier is not a critical factor for the hole injection enhancement. We suggest that a LiF insulating buffer layer enhances both injection barriers and tunneling through the barrier when a bias is applied.
AB - Hole injection enhancement has been reported for organic thin-film transistors and light-emitting diodes at the indium tin oxide (ITO) anode side by introducing a LiF layer, which is usually used as an electron injection layer at the cathode side to reduce the electron injection barrier. We report a revised mechanism for the hole injection enhancement by studying a prototype interface of pentacene/LiF/ITO anode. Upon deposition of LiF on ITO, the work function of ITO decreases, and energy level realignment occurs between the pentacene and ITO. The hole injection barrier from the ITO to the pentacene highest occupied molecular orbital increases significantly with LiF insertion. Thus, the reduction in the hole injection barrier is not a critical factor for the hole injection enhancement. We suggest that a LiF insulating buffer layer enhances both injection barriers and tunneling through the barrier when a bias is applied.
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U2 - 10.1063/1.3481092
DO - 10.1063/1.3481092
M3 - Article
AN - SCOPUS:77956858153
VL - 108
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 5
M1 - 053701
ER -