Revised hole injection mechanism of a thin LiF layer introduced between pentacene and an indium tin oxide anode

Hyun Sung Kim, Hyunbok Lee, Pyung Eun Jeon, Kwangho Jeong, Jung Han Lee, Yeonjin Yi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Hole injection enhancement has been reported for organic thin-film transistors and light-emitting diodes at the indium tin oxide (ITO) anode side by introducing a LiF layer, which is usually used as an electron injection layer at the cathode side to reduce the electron injection barrier. We report a revised mechanism for the hole injection enhancement by studying a prototype interface of pentacene/LiF/ITO anode. Upon deposition of LiF on ITO, the work function of ITO decreases, and energy level realignment occurs between the pentacene and ITO. The hole injection barrier from the ITO to the pentacene highest occupied molecular orbital increases significantly with LiF insertion. Thus, the reduction in the hole injection barrier is not a critical factor for the hole injection enhancement. We suggest that a LiF insulating buffer layer enhances both injection barriers and tunneling through the barrier when a bias is applied.

Original languageEnglish
Article number053701
JournalJournal of Applied Physics
Volume108
Issue number5
DOIs
Publication statusPublished - 2010 Sep 1

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indium oxides
tin oxides
anodes
injection
augmentation
insertion
molecular orbitals
electrons
transistors
light emitting diodes
buffers
cathodes
energy levels
prototypes
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Revised hole injection mechanism of a thin LiF layer introduced between pentacene and an indium tin oxide anode",
abstract = "Hole injection enhancement has been reported for organic thin-film transistors and light-emitting diodes at the indium tin oxide (ITO) anode side by introducing a LiF layer, which is usually used as an electron injection layer at the cathode side to reduce the electron injection barrier. We report a revised mechanism for the hole injection enhancement by studying a prototype interface of pentacene/LiF/ITO anode. Upon deposition of LiF on ITO, the work function of ITO decreases, and energy level realignment occurs between the pentacene and ITO. The hole injection barrier from the ITO to the pentacene highest occupied molecular orbital increases significantly with LiF insertion. Thus, the reduction in the hole injection barrier is not a critical factor for the hole injection enhancement. We suggest that a LiF insulating buffer layer enhances both injection barriers and tunneling through the barrier when a bias is applied.",
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Revised hole injection mechanism of a thin LiF layer introduced between pentacene and an indium tin oxide anode. / Kim, Hyun Sung; Lee, Hyunbok; Jeon, Pyung Eun; Jeong, Kwangho; Lee, Jung Han; Yi, Yeonjin.

In: Journal of Applied Physics, Vol. 108, No. 5, 053701, 01.09.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Revised hole injection mechanism of a thin LiF layer introduced between pentacene and an indium tin oxide anode

AU - Kim, Hyun Sung

AU - Lee, Hyunbok

AU - Jeon, Pyung Eun

AU - Jeong, Kwangho

AU - Lee, Jung Han

AU - Yi, Yeonjin

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N2 - Hole injection enhancement has been reported for organic thin-film transistors and light-emitting diodes at the indium tin oxide (ITO) anode side by introducing a LiF layer, which is usually used as an electron injection layer at the cathode side to reduce the electron injection barrier. We report a revised mechanism for the hole injection enhancement by studying a prototype interface of pentacene/LiF/ITO anode. Upon deposition of LiF on ITO, the work function of ITO decreases, and energy level realignment occurs between the pentacene and ITO. The hole injection barrier from the ITO to the pentacene highest occupied molecular orbital increases significantly with LiF insertion. Thus, the reduction in the hole injection barrier is not a critical factor for the hole injection enhancement. We suggest that a LiF insulating buffer layer enhances both injection barriers and tunneling through the barrier when a bias is applied.

AB - Hole injection enhancement has been reported for organic thin-film transistors and light-emitting diodes at the indium tin oxide (ITO) anode side by introducing a LiF layer, which is usually used as an electron injection layer at the cathode side to reduce the electron injection barrier. We report a revised mechanism for the hole injection enhancement by studying a prototype interface of pentacene/LiF/ITO anode. Upon deposition of LiF on ITO, the work function of ITO decreases, and energy level realignment occurs between the pentacene and ITO. The hole injection barrier from the ITO to the pentacene highest occupied molecular orbital increases significantly with LiF insertion. Thus, the reduction in the hole injection barrier is not a critical factor for the hole injection enhancement. We suggest that a LiF insulating buffer layer enhances both injection barriers and tunneling through the barrier when a bias is applied.

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