Abstract
This letter proposes an improved dc-single tone approximation model to calculate the RF-dc conversion efficiency, voltage sensitivity, and input impedance of rectification circuits comprising n diodes. The proposed model is based on the energy balance in the rectification circuit and is validated for general cases when the power losses of higher tones are lower than the dc losses. This condition is observed for frequencies at which the capacitor shunts the nonlinear resistor. A comparison of the results obtained using the derived equations and those from the simulation data obtained using a harmonic balance solver confirms the validity and accuracy of this approach for a wide range of output dc voltages and currents.
| Original language | English |
|---|---|
| Article number | 9000565 |
| Pages (from-to) | 276-279 |
| Number of pages | 4 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 30 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2020 Mar |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Simonov, N., Kim, J. T., & Ka, M. H. (2020). RF-DC conversion efficiency model for high-frequency diodes using DC-single tone approximation. IEEE Microwave and Wireless Components Letters, 30(3), 276-279. [9000565]. https://doi.org/10.1109/LMWC.2020.2971101