RF performance of high temperature diamond MESFET

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

DC and RF performance of p-type diamond MESFETs (Metal-Semiconductor Field Effect Transistors), is critically evaluated, especially for high temperature application. The investigation utilizes a theoretical large-signal RF model using a harmonic balance technique and the results are compared to experimental measurements. It is shown that the DC and RF performance of diamond MESFET is improved with temperature in an operating temperature range of 300 K to 923 K. The improvement of device performance with temperature can be attributed to a high value of activation energy (0.35 eV) for the ionization of boron. At 773 K, where essentially full activation occurs, the maximum RF output power at an operating frequency of 5 GHz is about 0.63 W/mm, and the maximum power-added efficiency (PAE) is 36% with the linear power gain of 9.4 dB. It is shown that the microwave power application of MESFETs in p-type diamond but otherwise conventional design is limited to high temperature.

Original languageEnglish
Pages705-708
Number of pages4
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) - Seoul, Korea
Duration: 1997 May 251997 May 30

Other

OtherProceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2)
CitySeoul, Korea
Period97/5/2597/5/30

Fingerprint

MESFET devices
Diamond
Diamonds
Temperature
Boron
High temperature applications
Ionization
Activation energy
Chemical activation
Microwaves

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Shin, M. W. (1997). RF performance of high temperature diamond MESFET. 705-708. Paper presented at Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2), Seoul, Korea, .
Shin, M. W. / RF performance of high temperature diamond MESFET. Paper presented at Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2), Seoul, Korea, .4 p.
@conference{8c138361ac8d43e1922ffa2c628f4b02,
title = "RF performance of high temperature diamond MESFET",
abstract = "DC and RF performance of p-type diamond MESFETs (Metal-Semiconductor Field Effect Transistors), is critically evaluated, especially for high temperature application. The investigation utilizes a theoretical large-signal RF model using a harmonic balance technique and the results are compared to experimental measurements. It is shown that the DC and RF performance of diamond MESFET is improved with temperature in an operating temperature range of 300 K to 923 K. The improvement of device performance with temperature can be attributed to a high value of activation energy (0.35 eV) for the ionization of boron. At 773 K, where essentially full activation occurs, the maximum RF output power at an operating frequency of 5 GHz is about 0.63 W/mm, and the maximum power-added efficiency (PAE) is 36{\%} with the linear power gain of 9.4 dB. It is shown that the microwave power application of MESFETs in p-type diamond but otherwise conventional design is limited to high temperature.",
author = "Shin, {M. W.}",
year = "1997",
month = "1",
day = "1",
language = "English",
pages = "705--708",
note = "Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2) ; Conference date: 25-05-1997 Through 30-05-1997",

}

Shin, MW 1997, 'RF performance of high temperature diamond MESFET' Paper presented at Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2), Seoul, Korea, 97/5/25 - 97/5/30, pp. 705-708.

RF performance of high temperature diamond MESFET. / Shin, M. W.

1997. 705-708 Paper presented at Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2), Seoul, Korea, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - RF performance of high temperature diamond MESFET

AU - Shin, M. W.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - DC and RF performance of p-type diamond MESFETs (Metal-Semiconductor Field Effect Transistors), is critically evaluated, especially for high temperature application. The investigation utilizes a theoretical large-signal RF model using a harmonic balance technique and the results are compared to experimental measurements. It is shown that the DC and RF performance of diamond MESFET is improved with temperature in an operating temperature range of 300 K to 923 K. The improvement of device performance with temperature can be attributed to a high value of activation energy (0.35 eV) for the ionization of boron. At 773 K, where essentially full activation occurs, the maximum RF output power at an operating frequency of 5 GHz is about 0.63 W/mm, and the maximum power-added efficiency (PAE) is 36% with the linear power gain of 9.4 dB. It is shown that the microwave power application of MESFETs in p-type diamond but otherwise conventional design is limited to high temperature.

AB - DC and RF performance of p-type diamond MESFETs (Metal-Semiconductor Field Effect Transistors), is critically evaluated, especially for high temperature application. The investigation utilizes a theoretical large-signal RF model using a harmonic balance technique and the results are compared to experimental measurements. It is shown that the DC and RF performance of diamond MESFET is improved with temperature in an operating temperature range of 300 K to 923 K. The improvement of device performance with temperature can be attributed to a high value of activation energy (0.35 eV) for the ionization of boron. At 773 K, where essentially full activation occurs, the maximum RF output power at an operating frequency of 5 GHz is about 0.63 W/mm, and the maximum power-added efficiency (PAE) is 36% with the linear power gain of 9.4 dB. It is shown that the microwave power application of MESFETs in p-type diamond but otherwise conventional design is limited to high temperature.

UR - http://www.scopus.com/inward/record.url?scp=0030653134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030653134&partnerID=8YFLogxK

M3 - Paper

SP - 705

EP - 708

ER -

Shin MW. RF performance of high temperature diamond MESFET. 1997. Paper presented at Proceedings of the 1997 5th IEEE International Conference on Properties and Applications of Dielectric Materials. Part 1 (of 2), Seoul, Korea, .