RF power dependence of refractive index of room temperature sputtered ZnO:Al thin films

Bhaskar Chandra Mohanty, Deuk Ho Yeon, Jae Ho Yun, Jun Sik Cho, Yong Soo Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The deposition power dependence of visible transmittance and refractive index of room temperature-deposited ZnO:Al thin films by RF magnetron sputtering has been studied. All films exhibited high visible transmittance and near-complete UV absorption. The refractive index of the films decreased continuously with an increase in the RF power at all photon energies in the visible and near-IR region, which has been partially attributed to the decreased packing density of the films. For each film, the refractive index exhibited strong frequency dispersion in the weak-absorption region. The origin of optical dispersion at different RF power has been discussed in the light of a single-oscillator model.

Original languageEnglish
Pages (from-to)347-351
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume115
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

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Refractive index
Thin films
Temperature
Magnetron sputtering
Photons

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Chemistry(all)

Cite this

Mohanty, Bhaskar Chandra ; Yeon, Deuk Ho ; Yun, Jae Ho ; Cho, Jun Sik ; Cho, Yong Soo. / RF power dependence of refractive index of room temperature sputtered ZnO:Al thin films. In: Applied Physics A: Materials Science and Processing. 2014 ; Vol. 115, No. 1. pp. 347-351.
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RF power dependence of refractive index of room temperature sputtered ZnO:Al thin films. / Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Yun, Jae Ho; Cho, Jun Sik; Cho, Yong Soo.

In: Applied Physics A: Materials Science and Processing, Vol. 115, No. 1, 01.01.2014, p. 347-351.

Research output: Contribution to journalArticle

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